Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Luke L. Jenkins"'
Publikováno v:
2020 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMCSI).
In this paper, a power distribution network analysis of a system card integrating a circuit model of a voltage regulator, an extracted printed circuit board power distribution, and a packaged ASIC with a circuit model and power specification is prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a83ff370cae8bb59cfea70458414a0
https://doi.org/10.1109/emcsi38923.2020.9191610
https://doi.org/10.1109/emcsi38923.2020.9191610
Publikováno v:
IEEE Transactions on Control Systems Technology. 24:1805-1811
Solenoids can be used as linear or incremental motion actuators, most often by coupling the solenoid armature to a linear spring. In this configuration, its limited open-loop stable range (less than one-third of the full range) affects performance an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce675afde069950cfe4992a52c1792de
https://doi.org/10.1109/tcst.2015.2507060
https://doi.org/10.1109/tcst.2015.2507060
Publikováno v:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
Data centers are increasing in number and size at astounding rates, while operational cost, thermal management, size, and performance continue to be the driving metrics for the power subsystems in the associated computing equipment. This paper presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d85f811f5d8c8dd4652ae10f1f36ca
https://doi.org/10.1109/apec.2018.8341336
https://doi.org/10.1109/apec.2018.8341336
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2015:001564-001593
The transmissibility reveals two very useful characteristics of a micro-electro-mechanical systems (MEMS) device, the resonant frequency and the mechanical quality factor. Real time knowledge on these two important factors can enhance application per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e72cfd9a321b86f1b02692f4f1a48d8
https://doi.org/10.4071/2015dpc-wp31
https://doi.org/10.4071/2015dpc-wp31
Autor:
M.J. Palmer, Luke L. Jenkins, Robert N. Dean, Stephan Henning, Sidni Hale, John Tennant, Justin D. Moses, Christopher G. Wilson
Publikováno v:
International Symposium on Microelectronics. 2012:000514-000523
Until recently, power semiconductors were usually produced as TO, power-PAK, and D-PAK style packaging, due to die size, thermal dissipation requirements, and the vertical flow of current through the devices. The introduction of GaN to power semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ada0e93b33710ba4bb9ed83342d0a140
https://doi.org/10.4071/isom-2012-poster_hale
https://doi.org/10.4071/isom-2012-poster_hale
Publikováno v:
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This paper presents a reliability analysis of GaN HFETs under typical operating conditions. The GaN HFETs are operated in a low voltage point of load converter for two years of continuous operation. The power devices are regularly characterized to ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64a0fb2b64a612fbba48b9b1f6d9a9c6
https://doi.org/10.1109/wipda.2015.7369268
https://doi.org/10.1109/wipda.2015.7369268
Autor:
Benjamin K. Rhea, Robert N. Dean, Jeffrey M. Aggas, William E. Abell, Luke L. Jenkins, Christopher G. Wilson
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
The design and implementation of planar inductors in low voltage GaN-based applications is investigated, and design techniques conducive to inexpensive, simple implementations are utilized. The advantages and limitations of planar technology, as it r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ad1dd9a06774fefd156e2df7dcc93d
https://doi.org/10.1109/apec.2015.7104528
https://doi.org/10.1109/apec.2015.7104528
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
A novel resonant gate driver designed for the high-frequency enhancement-mode GaN HEMT power devices is proposed in this work. Simulation results indicate that it reduces gate driving loss more than 50% compared to the conventional non-resonant gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a9be4c441c21c8470855891ddb0e17f
https://doi.org/10.1109/apec.2015.7104616
https://doi.org/10.1109/apec.2015.7104616
Autor:
Luke L. Jenkins, Robert N. Dean, Christopher G. Wilson, Benjamin K. Rhea, Frank T. Werner, Daniel K. Harris, William E. Abell
Publikováno v:
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6552ca3c140aa9cae6ab432250fb0dbe
https://doi.org/10.1109/wipda.2014.6964645
https://doi.org/10.1109/wipda.2014.6964645
Autor:
Robert N. Dean, William E. Abell, Frank T. Werner, Luke L. Jenkins, Christopher G. Wilson, Daniel K. Harris, Benjamin K. Rhea
Publikováno v:
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65251c1ae173370125427a945474dd24
https://doi.org/10.1109/wipda.2014.6964639
https://doi.org/10.1109/wipda.2014.6964639