Zobrazeno 1 - 10
of 489
pro vyhledávání: '"Luke J. Mawst"'
Autor:
Shining Xu, Shuqi Zhang, Jeremy D. Kirch, Cheng Liu, Andree Wibowo, Sudersena R. Tatavarti, Dan Botez, Luke J. Mawst
Publikováno v:
Photonics, Vol 10, Iss 12, p 1377 (2023)
The surface morphology of a buffer template is an important factor in the heteroepitaxial integration of optoelectronic devices with a significant lattice mismatch. In this work, InP-based long-wave infrared (~8 µm) emitting quantum cascade lasers w
Externí odkaz:
https://doaj.org/article/31617ba2dd494a0cbd1486724ccddc3d
Autor:
Sebastian Manzo, Patrick J. Strohbeen, Zheng Hui Lim, Vivek Saraswat, Dongxue Du, Shining Xu, Nikhil Pokharel, Luke J. Mawst, Michael S. Arnold, Jason K. Kawasaki
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Remote epitaxy represents a promising method for the synthesis of thin films on lattice-mismatched substrates, but its atomic-scale mechanisms are still unclear. Here, the authors demonstrate the growth of exfoliatable GaSb films on graphene-terminat
Externí odkaz:
https://doaj.org/article/3b0f099990db44e7a2b1024ab2879338
Autor:
Jae Ha Ryu, Benjamin Knipfer, Jeremy D. Kirch, Robert A. Marsland, Dan Botez, Tom Earles, Chris Galstad, Morgan Turville-Heitz, Chris Sigler, Axel Stromberg, Yan-Ting Sun, Sebastian Lourdudoss, Luke J. Mawst
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 3, Pp 1-6 (2022)
We present a reverse-taper quantum cascade laser (QCL) emitting at 4.6 μm, a novel-geometry device that can scale the output power while maintaining good beam quality. Buried-ridge waveguides with tapered and straight regions were formed by ICP etch
Externí odkaz:
https://doaj.org/article/daa45b161ca04410accf4e91e92e47e8
Autor:
Luke J. Mawst, Dan Botez
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 1, Pp 1-25 (2022)
The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a maturity level that enables a variety of applications which require compact laser sources capable of watt-range output powers with high beam quality. We review the
Externí odkaz:
https://doaj.org/article/7093e691f53e4067a2599c2f82467584
Publikováno v:
Photonics, Vol 9, Iss 7, p 436 (2022)
Three types of GaAsP metamorphic buffer layers, including linearly graded, step graded, and metamorphic superlattices, were compared for the purposes of virtual substrates for red laser diode heterostructures. Laser diodes were fabricated on GaAs sub
Externí odkaz:
https://doaj.org/article/6a5e6775f6644a88b57ba8f047440c2c
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 6, Pp 2262-2271 (2012)
We report our experimental results and theoretical analysis on carrier escape time in In0.4Ga0.6As1 -yNy/GaAs (y = 0; 0.005) ridge waveguide single-quantum-well (QW) lasers with N-contents of 0% and 0.5%. The experiments were carried out by using nov
Externí odkaz:
https://doaj.org/article/ccc4bafd4b37422892003cff085bc8f0
Autor:
Lifang Xu, Dinesh Patel, Carmen S. Menoni, Jon M. Pikal, Jeng-Ya Yeh, J. Y. T. Huang, Luke J. Mawst, Nelson Tansu
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 6, Pp 2382-2389 (2012)
The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrie
Externí odkaz:
https://doaj.org/article/255057c9a25348109380d3f4a8757862
Autor:
Ayushi Rajeev, Weixin Chen, Jeremy D. Kirch, Susan E. Babcock, Thomas F. Kuech, Thomas Earles, Luke J. Mawst
Publikováno v:
Crystals, Vol 8, Iss 11, p 437 (2018)
Quantum wells and barriers with precise thicknesses and abrupt composition changes at their interfaces are critical for obtaining the desired emission wavelength from quantum cascade laser devices. High-resolution X-ray diffraction and transmission e
Externí odkaz:
https://doaj.org/article/ac725b07ba4c4dd7ad185b3fc921bd90
Autor:
Alexander Spott, Jon Peters, Michael L. Davenport, Eric J. Stanton, Chong Zhang, Charles D. Merritt, William W. Bewley, Igor Vurgaftman, Chul Soo Kim, Jerry R. Meyer, Jeremy Kirch, Luke J. Mawst, Dan Botez, John E. Bowers
Publikováno v:
Photonics, Vol 3, Iss 2, p 35 (2016)
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bo
Externí odkaz:
https://doaj.org/article/da4a194e586046549d267af9b1981756
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ff9e81840a8465aeb2ee47ab8ab09d
https://doi.org/10.1109/jqe.2022.3145838
https://doi.org/10.1109/jqe.2022.3145838