Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Luke Hu"'
Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Chih-Yi Wang, Steven Hsu, Osbert Cheng, Chien-Ting Lin, Yu-Shiang Lin, Zen-Jay Tsai, Chih-Wei Yang, Jim Lu, Steve Yi-Wen Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 281-288 (2022)
The short–channel behaviors of n–channel (electron–conducting) fin field–effect transistors (n–FinFETs) set at different threshold voltages were analyzed at different power supply voltages. Interesting observations were made by considering
Externí odkaz:
https://doaj.org/article/6a435b103bed47d28f4652cc1ebc4c31
Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Chih-Yi Wang, Steven Hsu, Osbert Cheng, Chien-Ting Lin, Yu-Shiang Lin, Zen-Jay Tsai, Ted Wang, Touber Tseng, Chih-Wei Yang, Chin-Yang Hsieh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 344-350 (2019)
In this paper, we present a descriptive analysis of a performance index, ΔVDIBLSS/(Ion/Ioff), used for performance monitoring. Scaled nand p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) (planar and FinFET devices) are include
Externí odkaz:
https://doaj.org/article/2e9d78736c3a4004851369e53028e38c
Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Osbert Cheng, Chih-Yi Wang, C. S. Tseng, Ren Huang, Po-Hsieh Lin, Kuan-Yu Lu, I-Fan Chang, Chi-Ju Lee, Yen-Liang Wu, Mike Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 207-213 (2018)
This paper aims to investigate the recently proposed figure of merit, ΔVDIBLSS/(Ion/Ioff), in detail. Experimental results show that ΔVDIBLSS/(Ion/Ioff) represents the index of device immunity to short-channel effects in bulk FinFETs. The value of
Externí odkaz:
https://doaj.org/article/828ad9d5138e4529a144a668d7ba1fcf
Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Chien-Ting Lin, I-Chang Wang, Ming-Chih Chen, Andy Lai, Pei-Wen Wang, Chia-Jung Hsu, Wen-Yuan Pang, Chin-Hao Kuo, Osbert Cheng, Chih-Yi Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 18-22 (2017)
This paper aims to investigate the device parameters, including drain-induced barrier lowering (DIBL), subthreshold swing (SS), and saturation drive current, Id,sat, of bulk-Si n-channel FinFET devices (bulk n-FinFETs). The impact of lightly doped dr
Externí odkaz:
https://doaj.org/article/9275c6569a6b4258847de41cceafc9ec
Autor:
Robert Bielitzki, Martin Behrens, Tom Behrendt, Alexander Franz, Christoph Centner, Luke Hughes, Stephen D. Patterson, Johnny Owens, Michael Behringer, Lutz Schega
Publikováno v:
Sports Medicine - Open, Vol 10, Iss 1, Pp 1-11 (2024)
Abstract Physical exercise induces acute psychophysiological responses leading to chronic adaptations when the exercise stimulus is applied repeatedly, at sufficient time periods, and with appropriate magnitude. To maximize long-term training adaptat
Externí odkaz:
https://doaj.org/article/5db30f1afe5c4b1493e642a2626e7492
Publikováno v:
Experimental Physiology, Vol 109, Iss 5, Pp 672-688 (2024)
Abstract This study compared the acute hypoalgesic and neurophysiological responses to low‐load resistance exercise with and without blood flow restriction (BFR), and free‐flow, high‐load exercise. Participants performed four experimental condi
Externí odkaz:
https://doaj.org/article/ae906418c75a4542af8b027451a6e40f
Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Chih-Yi Wang, Steven Hsu, Osbert Cheng, Chien-Ting Lin, Yu-Shiang Lin, Zen-Jay Tsai, Ted Wang, Touber Tseng, Chih-Wei Yang, Chin-Yang Hsieh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 344-350 (2019)
In this paper, we present a descriptive analysis of a performance index, ΔVDIBLSS/(Ion/Ioff), used for performance monitoring. Scaled nand p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) (planar and FinFET devices) are include
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::d6d39b2f01ae87afef03ba4b284e58f4
https://ieeexplore.ieee.org/document/8640085/
https://ieeexplore.ieee.org/document/8640085/
Autor:
Ming-Tse Lin, Chu-Fu Lin, Luke Hu, Tony Lin, C. T. Yeh, Chun-Hung Chen, Steven Hsu, Chien-Li Kuo
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
In this paper, the fabrication of the through-silicon via (TSV) is introduced and characterized. Pre-bond structural analysis and electrical tests were performed and analyzed to examine the robustness of the fabrication process and the structural int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb003fbdcb4a081dab0a9806bad2c864
https://doi.org/10.1109/ectc32696.2021.00055
https://doi.org/10.1109/ectc32696.2021.00055
Publikováno v:
Molecules, Vol 29, Iss 20, p 4949 (2024)
Covalent drugs can offer significant advantages over non-covalent drugs in terms of pharmacodynamics (i.e., target-binding properties). However, the development of covalent drugs is sometimes hampered by pharmacokinetic limitations (e.g., low bioavai
Externí odkaz:
https://doaj.org/article/805cc9c8b4584002a97f9e54619e76a4
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 8:2222-2226
In this paper, different layouts of the metal cap fabricated above the through-silicon via (TSV) are experimented. Metal caps are able to counteract the force exerted by copper (Cu) protrusion, but the large Cu area of the metal cap increases the ris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e685f9e6335224c1472f2fdee242a90d
https://doi.org/10.1109/tcpmt.2018.2858286
https://doi.org/10.1109/tcpmt.2018.2858286