Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation

Autor: Justin D. Holmes, Shane Garvey, Noel Kennedy, Mary A. Kennedy, Luke Eaton, Michael Nolan, Barbara Maccioni, Brenda Long, Fintan Meaney, Ray Duffy

Publikováno v: Langmuir. 36:9993-10002

Reported here is a new chemical route for the wet chemical functionalization of germanium (Ge), whereby arsanilic acid is covalently bound to a chlorine (Cl)-terminated surface. This new route is used to deliver high concentrations of arsenic (As) do

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23b6b58ef1d642527024c18c6ee39243
https://doi.org/10.1021/acs.langmuir.0c00408

Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm

Autor: C. Hatem, Gioele Mirabelli, Dirch Hjorth Petersen, Noel Kennedy, Mary White, Luke Eaton, Fintan Meaney, John MacHale, Ray Duffy, Lida Ansari, James P. Connolly, Rong Lin, Farzan Gity, Kevin Thomas, Emanuele Pelucchi, Nikolay Petkov, Brenda Long

Publikováno v: MacHale, J, Meaney, F, Kennedy, N, Eaton, L, Mirabelli, G, White, M, Thomas, K, Pelucchi, E, Petersen, D H, Lin, R, Petkov, N, Connolly, J, Hatem, C, Gity, F, Ansari, L, Long, B & Duffy, R 2019, ' Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm ', Journal of Applied Physics, vol. 125, no. 22, 225709 . https://doi.org/10.1063/1.5098307
Journal of Applied Physics

Silicon (Si) has been scaled below 10 nm in multigate and silicon-on-insulator (SOI) device technologies, but clearly Si thickness cannot be reduced indefinitely, as we will run out of atoms eventually. As thickness approaches 5 nm, surfaces and inte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e293c5bc3eb830b7977da357b72e1b4b
https://orbit.dtu.dk/en/publications/5441f8e7-228e-4dda-9f16-70d3bce7c5bf