Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Luke A. M. Lyle"'
Autor:
Yao Yao, Serdal Okur, Luke A. M. Lyle, Gary S. Tompa, Tom Salagaj, Nick Sbrockey, Robert F. Davis, Lisa M. Porter
Publikováno v:
Materials Research Letters, Vol 6, Iss 5, Pp 268-275 (2018)
Heteroepitaxial films of Ga $ _2 $ O $ _3 $ were grown on c-plane sapphire (0001). The stable phase β-Ga $ _2 $ O $ _3 $ was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures betwee
Externí odkaz:
https://doaj.org/article/badb4c85ab714251b12d5746f9a576b0
Publikováno v:
ACS Applied Electronic Materials. 4:4471-4481
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ae547176a58f89e64facc91ae7b4266
https://doi.org/10.1021/acsaelm.2c00731
https://doi.org/10.1021/acsaelm.2c00731
Autor:
Elizabeth V. Favela, Tianxiang Lin, Kalyan K. Das, Zbigniew Galazka, G. Wagner, Kunyao Jiang, Lisa M. Porter, Diamond Moody, Luke A. M. Lyle, Andreas Popp
Publikováno v:
ECS Transactions. 92:71-78
In this study, electrical properties of four metals (W, Mo, Au, Ni) as Schottky contacts on n-type (100)-oriented β-Ga2O3 substrates grown by the Czochralski method are reported. The Schottky barrier heights for each metal contact were calculated fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5289c095aaa6ab7827efb720c8bd6523
https://doi.org/10.1149/09207.0071ecst
https://doi.org/10.1149/09207.0071ecst
Autor:
Luke A. M. Lyle, Robert F. Davis, Serdal Okur, Tom Salagaj, Lisa M. Porter, Yao Yao, Nick M. Sbrockey, Gary S. Tompa
Publikováno v:
Materials Research Letters, Vol 6, Iss 5, Pp 268-275 (2018)
Heteroepitaxial films of Ga $ _2 $ O $ _3 $ were grown on c-plane sapphire (0001). The stable phase β-Ga $ _2 $ O $ _3 $ was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4861a57e4a85b56e03b5333c28c1533b
https://doi.org/10.1080/21663831.2018.1443978
https://doi.org/10.1080/21663831.2018.1443978
Autor:
Swarnav Mukhopadhyay, Luke A. M. Lyle, Hridibrata Pal, Kalyan K. Das, Lisa M. Porter, Biplab Sarkar
Publikováno v:
Journal of Applied Physics. 131:025702
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a90f621348f082df7e43f00c0a9df569
https://doi.org/10.1063/5.0068211
https://doi.org/10.1063/5.0068211
Autor:
Robert F. Davis, Lisa M. Porter, Yao Yao, Nick M. Sbrockey, Luke A. M. Lyle, Tom Salagaj, Gary S. Tompa, Johanne A. Rokholt, Serdal Okur
Publikováno v:
ECS Transactions. 80:191-196
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2348506287038fa9855ae39b0c57eed
https://doi.org/10.1149/08007.0191ecst
https://doi.org/10.1149/08007.0191ecst
Publikováno v:
Journal of Vacuum Science & Technology B. 39:040601
From an analysis of Pd contact Schottky diodes fabricated on (100) β-Ga2O3 wafers, in combination with data extracted from published work, we show that the barrier height inhomogeneity commonly observed in β-Ga2O3 Schottky diodes has a strong corre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bce8fc5c62f447f2153c9303c769fe6
https://doi.org/10.1116/6.0001059
https://doi.org/10.1116/6.0001059
Autor:
Donald L. Dorsey, Lisa M. Porter, Tyson C. Back, Luke A. M. Lyle, Kelson D. Chabak, Cynthia T. Bowers, Andrew J. Green, Eric R. Heller
Publikováno v:
APL Materials. 9:061104
Chemical and electrical measurements of Ti/(010) β-Ga2O3 and Ti/(001) β-Ga2O3 interfaces were conducted as a function of annealing temperature using x-ray photoelectron spectroscopy (XPS), current density–voltage (J–V), and capacitance–voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::682770ae74b70287013ae71aac3ad51d
https://doi.org/10.1063/5.0051340
https://doi.org/10.1063/5.0051340
Autor:
Lisa M. Porter, Kunyao Jiang, Zbigniew Galazka, G. Wagner, Kalyan K. Das, Andreas Popp, Luke A. M. Lyle, Elizabeth V. Favela
Publikováno v:
Journal of Vacuum Science & Technology A. 39:033202
The Schottky barriers of Ti, Mo, Co, Ni, Pd, and Au on (100) β-Ga2O3 substrates were analyzed using a combination of current-voltage (J-V), capacitance-voltage (C-V), and current-voltage-temperature (J-V-T) measurements. Near-ideal, average ideality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e66bf49203db6d3c60c3062cc30e198
https://doi.org/10.1116/6.0000877
https://doi.org/10.1116/6.0000877
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 382:54-59
We present results on ion transport through large bore capillaries (macrocapillaries) that probe both the geometric and ion-guided aspects of this ion delivery mechanism. We have demonstrated that guiding in macrocapillaries exhibits position- and an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae2eb8917d5a9b2155a25701cb3028f9
https://doi.org/10.1016/j.nimb.2016.04.004
https://doi.org/10.1016/j.nimb.2016.04.004