Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Lukas Worschech"'
Autor:
Andreas Pfenning, Sebastian Krüger, Fauzia Jabeen, Lukas Worschech, Fabian Hartmann, Sven Höfling
Publikováno v:
Nanomaterials, Vol 12, Iss 14, p 2358 (2022)
Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined sin
Externí odkaz:
https://doaj.org/article/c5d8dbb10f6743f9b18f5a8cad16db94
Autor:
Florian Rothmayr, Edgar David Guarin Castro, Fabian Hartmann, Georg Knebl, Anne Schade, Sven Höfling, Johannes Koeth, Andreas Pfenning, Lukas Worschech, Victor Lopez-Richard
Publikováno v:
Nanomaterials, Vol 12, Iss 6, p 1024 (2022)
Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2
Externí odkaz:
https://doaj.org/article/aff09d8ca22542acb8831af49bfd3600
Autor:
Edgar David Guarin Castro, Florian Rothmayr, Sebastian Krüger, Georg Knebl, Anne Schade, Johannes Koeth, Lukas Worschech, Victor Lopez-Richard, Gilmar Eugenio Marques, Fabian Hartmann, Andreas Pfenning, Sven Höfling
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055024-055024-6 (2020)
We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitt
Externí odkaz:
https://doaj.org/article/edc94ef927c94e3f91132e7985e04a29
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 158-163 (2015)
We report on nonlinear transport phenomena in an asymmetric Y-transistor. The left branch acting as gate for the channel formed between the stem and the right branch of the Y-transistor is isolated from the branching section via a narrow constriction
Externí odkaz:
https://doaj.org/article/c33c75a0016a47a39902159c561ddd30
Autor:
Davide Cimbri, Begum Yavas-Aydin, Fabian Hartmann, Fauzia Jabeen, Lukas Worschech, Sven Hofling, Edward Wasige
Publikováno v:
IEEE Transactions on Electron Devices
In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b94534e64460769693aef07ea60014a
https://eprints.gla.ac.uk/271617/2/271617.pdf
https://eprints.gla.ac.uk/271617/2/271617.pdf
Autor:
Andreas Pfenning, Yaksh Rawal, Anne Schade, Andreas Bader, Fabian Hartmann, Lukas Worschech, Georg Knebl, Sven Höfling, Robert Weih
Publikováno v:
Infrared Remote Sensing and Instrumentation XXVIII.
We present recent progress on novel mid-infrared (MIR) light emitters and detectors. Optimized heterostructure and high-quality crystal growth allow for room temperature operation of interband cascade lasers (ICLs) with lasing wavelengths 𝜆 ≥ 6
p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region
Autor:
Andreas Pfenning, Sven Höfling, Monika Emmerling, Fabian Hartmann, Lukas Worschech, Robert Weih
The authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF) via the national project HIRT (Grant No. FKZ 13XP5003B). Mid‐infrared (MIR) resonant tunneling diode (RTD) photodetectors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::696fd39a90e0c2c8f340336923bfb3d8
https://hdl.handle.net/10023/18748
https://hdl.handle.net/10023/18748
Autor:
Johannes Koeth, Andreas Pfenning, Anne Schade, Victor Lopez-Richard, Fabian Hartmann, Edgar David Guarin Castro, Georg Knebl, Florian Rothmayr, Gilmar E. Marques, Sebastian Krüger, Lukas Worschech, Sven Höfling
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055024-055024-6 (2020)
We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitt
Autor:
Sven Höfling, Andreas Pfenning, Fabian Hartmann, Robert Weih, Lukas Worschech, C. Kistner, Martin Kamp, Anne Schade, Manuel Meyer, Johannes Koeth, Andreas Bader, Florian Rothmayr, Georg Knebl, Sebastian Krüger
Publikováno v:
Infrared Remote Sensing and Instrumentation XXVI.
Molecule and gas sensing is a key technology that is applied in multiple environmental, industrial and medical fields. In particular optical detection technologies enable contactless, nondestructive, highly sensitive and fast detection of even smalle
Autor:
Monika Emmerling, Miguel A. Bandres, Mordechai Segev, Oleg A. Egorov, K. Winkler, Timothy Chi Hin Liew, Sven Höfling, Lukas Worschech, Christian Schneider, Rong-Chun Ge, Tristan H. Harder, Sebastian Klembt
Publikováno v:
Nature
The authors thank R. Thomale for fruitful discussions. S.K. acknowledges the European Commission for the H2020 Marie Skłodowska-Curie Actions (MSCA) fellowship (Topopolis). S.K., S.H. and M.S. are grateful for financial support by the JMU-Technion s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1302f3b525e1f0a6db3d53ea73db1608
http://arxiv.org/abs/1808.03179
http://arxiv.org/abs/1808.03179