Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Lukas Tinschert"'
Publikováno v:
Microelectronics Reliability. 64:519-523
The demands on reliable and fault tolerant power electronic devices are increasing. One opportunity to increase the IGBT short circuit ruggedness is to modify the thermal capacitance and the thermal resistance close to the chip and hence extend the p
Publikováno v:
Microelectronics Reliability. 55:903-911
Reliability of Press-Pack IGBTs is a topic with limited published data and information. This paper presents results of a power cycling test with state-of-the-art high power devices. An accelerated lifetime test scheme was defined, and six out of eigh
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
The evaluation of power cycling results needs correct measurement of the course of thermal resistance. Hence an accurate online measurement of the junction temperature is necessary. Different measurement and power cycling methods were evaluated. The
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
The point of highest mechanical load in an interconnect layer, where crack propagation will start, depends strongly on geometry and material of the attached die as it was already indicated by the CIPS08 lifetime model for insulated models [1]. Theref
Publikováno v:
2013 15th European Conference on Power Electronics and Applications (EPE).
The submodel technique was mainly developed in mechanical engineering for complex parts and assemblies. In the simulations of microelectronics housing the technique was successful implemented for thermal cycling conditions. In thispaper the evaluatio