Zobrazeno 1 - 10
of 315
pro vyhledávání: '"Lukas M, Eng"'
Autor:
Leonard M. Verhoff, Mike N. Pionteck, Michael Rüsing, Holger Fritze, Lukas M. Eng, Simone Sanna
Publikováno v:
Physical Review Research, Vol 6, Iss 4, p L042015 (2024)
Ferroelectrics such as LiNbO_{3} (LN) are wide-band-gap insulators that may show a high local electric conductivity at the domain walls (DWs). The latter are interfaces separating regions of noncollinear polarization, which can be manipulated to buil
Externí odkaz:
https://doaj.org/article/7f2f8864c8384ed5a00cab6786fb82ed
Autor:
Joseph Matson, Sören Wasserroth, Xiang Ni, Maximilian Obst, Katja Diaz-Granados, Giulia Carini, Enrico Maria Renzi, Emanuele Galiffi, Thomas G. Folland, Lukas M. Eng, J. Michael Klopf, Stefan Mastel, Sean Armster, Vincent Gambin, Martin Wolf, Susanne C. Kehr, Andrea Alù, Alexander Paarmann, Joshua D. Caldwell
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Structural anisotropy in crystals is crucial for controlling light propagation, particularly in the infrared spectral regime where optical frequencies overlap with crystalline lattice resonances, enabling light-matter coupled quasiparticles
Externí odkaz:
https://doaj.org/article/6aad7bb7628b4b0ab964f8e41dbef747
Autor:
Moritz Winter, Francisco J. T. Goncalves, Ivan Soldatov, Yangkun He, Belén E. Zúñiga Céspedes, Peter Milde, Kilian Lenz, Sandra Hamann, Marc Uhlarz, Praveen Vir, Markus König, Philip J. W. Moll, Richard Schlitz, Sebastian T. B. Goennenwein, Lukas M. Eng, Rudolf Schäfer, Joachim Wosnitza, Claudia Felser, Jacob Gayles, Toni Helm
Publikováno v:
Communications Materials, Vol 3, Iss 1, Pp 1-9 (2022)
Topological spin textures are promising for their potential application in racetrack memory devices. Here, the characteristic Hall transport signature of antiskyrmions is investigated in Mn1.4PtSn, providing a platform for higher magnetic and tempera
Externí odkaz:
https://doaj.org/article/57ea0e17294441a89bb03e831b0cf684
Autor:
David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng
Publikováno v:
Advanced Physics Research, Vol 2, Iss 9, Pp n/a-n/a (2023)
Abstract Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power. Memory concepts based on ferroelectric HfO2 like the ferroelectric field effect t
Externí odkaz:
https://doaj.org/article/b635e47b59244f44b6f7ff733d5153ce
Autor:
Maximilian Lederer, Sukhrob Abdulazhanov, Ricardo Olivo, David Lehninger, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallizatio
Externí odkaz:
https://doaj.org/article/240560cdb6e64b16966221ef786dd2c8
Autor:
Sergej Neufeld, Uwe Gerstmann, Laura Padberg, Christof Eigner, Gerhard Berth, Christine Silberhorn, Lukas M. Eng, Wolf Gero Schmidt, Michael Ruesing
Publikováno v:
Crystals, Vol 13, Iss 10, p 1423 (2023)
The crystal family of potassium titanyl phosphate (KTiOPO4) is a promising material group for applications in quantum and nonlinear optics. The fabrication of low-loss optical waveguides, as well as high-grade periodically poled ferroelectric domain
Externí odkaz:
https://doaj.org/article/c36298a10c2a436c9f120465279b50b1
Publikováno v:
Applied Sciences, Vol 13, Iss 18, p 10429 (2023)
Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale and even below. Nevertheless, the out-of-plane electric field c
Externí odkaz:
https://doaj.org/article/ece576cb2b914fc093a0c135f1bb218d
Autor:
Tarek Ali, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, Katrin Zimmermann, Philipp Schramm, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Konrad Seidel, Johannes Müller, Jan Van Houdt, Lukas M. Eng
Publikováno v:
Electronic Materials, Vol 2, Iss 3, Pp 344-369 (2021)
A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to
Externí odkaz:
https://doaj.org/article/6a0badee24cb4cb1b98d56cb4bc03298
Publikováno v:
Frontiers in Nanotechnology, Vol 4 (2022)
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications. However, due to the polycrystalline nature of these hafniu
Externí odkaz:
https://doaj.org/article/bf90694bec454c118ffb4de2e87508ad
Autor:
Ziheng Yao, Xinzhong Chen, Lukas Wehmeier, Suheng Xu, Yinming Shao, Zimeng Zeng, Fanwei Liu, Alexander S. Mcleod, Stephanie N. Gilbert Corder, Makoto Tsuneto, Wu Shi, Zihang Wang, Wenjun Zheng, Hans A. Bechtel, G. L. Carr, Michael C. Martin, Alex Zettl, D. N. Basov, Xi Chen, Lukas M. Eng, Susanne C. Kehr, Mengkun Liu
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
s-SNOM is a powerful tool, but it is less sensitive to in-plane variations. Here the authors present a method to improve this with a metallic microdisk antenna, which they demonstrate by probing in-plane phonon responses.
Externí odkaz:
https://doaj.org/article/884be5001178415d9991a31549ae378a