Scalable Creation of Deep Silicon-Vacancy Color Centers in Diamond by Ion Implantation through a 1-mu m Pinhole

Autor: Florian Sledz, Lukas Hunold, Mario Agio, Haritha Kambalathmana, Lorenzo Giuntini, N. Gelli, Stefano Lagomarsino, Silvio Sciortino, Assegid Mengistu Flatae

Publikováno v: Advanced quantum technologies 4 (2021): 2100079-1–2100079-6. doi:10.1002/qute.202100079
info:cnr-pdr/source/autori:Hunold L.; Lagomarsino S.; Flatae A.M.; Kambalathmana H.; Sledz F.; Sciortino S.; Gelli N.; Giuntini L.; Agio M./titolo:Scalable Creation of Deep Silicon-Vacancy Color Centers in Diamond by Ion Implantation through a 1-mu m Pinhole/doi:10.1002%2Fqute.202100079/rivista:Advanced quantum technologies/anno:2021/pagina_da:2100079-1/pagina_a:2100079-6/intervallo_pagine:2100079-1–2100079-6/volume:4

The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion im

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4d142a5330542d72f85b4b7b648789a
http://www.cnr.it/prodotto/i/461750