Sub-nT resolution of Single Layer Sensor Based on the AMR Effect in La2/3Sr1/3MnO3 Thin Films

Autor: Paolo Perna, Victor Pierron, Laurence Méchin, S Lebargy, Ruben Guerrero, Stéphane Flament, Bruno Guillet, Arturo Vera, Julio Camarero, Luiz Enger, Rodolfo Miranda, Isidoro Martinez, Lucas Pérez, Marc Lam Chok Sing, Maria Teresa Gonzalez, Imtiaz-Noor Bhatti, Jose Manuel Diez

Publikováno v: IEEE Transactions on Magnetics
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2021, pp.1-1. ⟨10.1109/TMAG.2021.3089373⟩
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
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E-Prints Complutense. Archivo Institucional de la UCM

Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_

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https://hal.archives-ouvertes.fr/hal-03431579