Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Luiz Alberto Pasini Melek"'
Autor:
Anselmo Luís da Silva Júnior, Márcio Cherem Schneider, Carlos Galup-Montoro, Luiz Alberto Pasini Melek
Publikováno v:
International Journal of Circuit Theory and Applications. 49:1261-1273
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201846614a195b994cce932e0d10a88f
https://doi.org/10.1002/cta.2992
https://doi.org/10.1002/cta.2992
'Smart Embedded Systems: Advances and Applications'is a comprehensive guide that demystifies the complex world of embedded technology. The book journeys through a wide range of topics from healthcare to energy management, autonomous robotics, and wir
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 65:1239-1243
In this brief, we analyze the operation of the classical Schmitt trigger (ST) circuit as an ultra-low-voltage (ULV) amplifier. Small-signal analysis is employed in order to determine optimum relative transistor sizes, which maximize the voltage gain.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693e2a662ede447d9b0b1de2841e8419
https://doi.org/10.1109/tcsii.2017.2783975
https://doi.org/10.1109/tcsii.2017.2783975
Autor:
Luiz Alberto Pasini Melek, Anselmo Luis da Silva, Carlos Galup-Montoro, Márcio Cherem Schneider
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 64:869-878
In this paper, the classical CMOS Schmitt trigger (ST) operating in the subthreshold regime is analyzed. The complete DC voltage transfer characteristic of the CMOS ST is determined. The metastable segment of the characteristic is explained in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22314ccbff1105b22128b76a6dfeb182
https://doi.org/10.1109/tcsi.2016.2631726
https://doi.org/10.1109/tcsi.2016.2631726
Publikováno v:
2014 Argentine Conference on Micro-Nanoelectronics, Technology and Applications (EAMTA).
The operation of digital circuits from power supply voltages of the order of 200 mV or less imposes that, in general, MOSFETs are biased in the subthreshold regime, characterized by the exponential relation between the control voltages and the curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbad42fd25038633d103f88be2f39206
https://doi.org/10.1109/eamta.2014.6906070
https://doi.org/10.1109/eamta.2014.6906070