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Correlation of optical properties and interface morphology in type-II semiconductor heterostructures
Autor:
Luise Rost, Kerstin Volz, Wolfgang Stolz, S. Nau, C. Fuchs, Martin Koch, P. Kükelhan, S. Gies, Wolfram Heimbrodt, Markus Stein
(Ga,In)As/GaAs/Ga(As,Sb) and (Ga,In)As/GaAs/Ga(N,As) type-II double quantum well heterostructures have been grown by metal-organic vapor phase epitaxy. A growth interruption procedure was used to intentionally modify the morphology of the internal in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c48281f41c8da2047e41e82f5d087eab
https://publica.fraunhofer.de/handle/publica/255381
https://publica.fraunhofer.de/handle/publica/255381
Autor:
Luise Rost, Wolfgang Stolz, Milan Maradiya, Jannik Lehr, Wolfram Heimbrodt, Florian Fillsack, Lukas Hellweg
Publikováno v:
Journal of Luminescence. 231:117817
The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectrosocopy in type II Ga(As,Sb)/GaAs/(Ga,In)As double quantum well structur