Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Luis M. Rodriguez-Mendez"'
Autor:
Itza Esther Villavicencio-Avila, Anibal Pacheco-Sanchez, Luis M. Rodriguez-Mendez, Eloy Ramirez-Garcia
This article presents the design of high-frequencydown-conversion mixers using a carbon nanotube fieldeffecttransistor (CNTFET). An experimentally-calibrated semiphysicalcompact model for high-frequency CNTFET technologieshas been used. The designed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fdfa0e4b72c9cdb715ecee31f25df0f
https://doi.org/10.21203/rs.3.rs-2351191/v1
https://doi.org/10.21203/rs.3.rs-2351191/v1
Autor:
Luis M. Diaz-Albarran, Anibal Pacheco-Sanchez, Luis M. Rodriguez-Mendez, Eloy Ramirez-Garcia, M. Enciso-Aguilar, Javier N. Ramos-Silva, Michael Schroter
Publikováno v:
IEEE Transactions on Nanotechnology. 19:284-291
This article details the design of single- and double-stage maximum gain and low-noise high-frequency amplifiers at 2.4 GHz using a compact carbon nanotube field-effect transistor model, which is initially calibrated with hysteresis-free experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a34a842a5472ce16c646b357ccf298cf
https://doi.org/10.1109/tnano.2020.2978816
https://doi.org/10.1109/tnano.2020.2978816
Autor:
Frédéric Aniel, Eloy Ramirez-Garcia, Nicolas Zerounian, L.M. Diaz-Albarran, E. Garduño-Nolasco, Donato Valdez-Pérez, M. Enciso-Aguilar, Martha Galaz-Larios, Luis M. Rodriguez-Mendez
Publikováno v:
Solid-State Electronics. 153:1-7
We present a reliable technique to model the influence of DC current-crowding in bipolar transistors on the variation of emitter width (WE,ef) as a function of collector current density (JC) in silicon-germanium-carbon heterojunction bipolar transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::518c85514c42f36099fbf51a5a007dc3
https://doi.org/10.1016/j.sse.2018.12.010
https://doi.org/10.1016/j.sse.2018.12.010
Autor:
Eloy Ramirez-Garcia, Brandon A. Alcantara-Gavilan, M. Enciso-Aguilar, Luis M. Rodriguez-Mendez, Javier N. Ramos-Silva
Publikováno v:
2019 IEEE International Fall Meeting on Communications and Computing (ROC&C).
This paper describes the design and characterization of an ultra-wideband (UWB) flexible antenna for personal mobile communications. This antenna was fabricated on a polyamide substrate and its surface is equal to 40 × 55mm2. Modelling results were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d31fa9ca82d6783b105ca52173e30fde
https://doi.org/10.1109/rocc.2019.8873531
https://doi.org/10.1109/rocc.2019.8873531
Publikováno v:
CCE
We present a computer analysis of three different size reduction techniques on a volcano smoke planar antenna. A successfully structure size reduction was obtained using high permittivity substrates, partial cuts insertion, and slots insertion. We co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b49a7d9e9bd5c384d1d37439d2112d46
https://doi.org/10.1109/iceee.2013.6676082
https://doi.org/10.1109/iceee.2013.6676082
Autor:
Martha Galaz-Larios, Nicolas Zerounian, M. Enciso-Aguilar, Frédéric Aniel, E Ramirez-Garcia, Donato Valdez-Pérez, L.M. Diaz-Albarran, Luis M. Rodriguez-Mendez
Publikováno v:
Semiconductor Science and Technology. 31:035020
The influence of temperature (300 K and 40 K) on intrinsic transit times and microwave noise performances of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) is investigated. At 300 K, we compared measured and modelled S-parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46186adaad51871c65555aefeeb03675
https://doi.org/10.1088/0268-1242/31/3/035020
https://doi.org/10.1088/0268-1242/31/3/035020
Publikováno v:
2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2011).
In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f50ff3e36edaf5b7e2b1626676431bda
https://doi.org/10.1109/imoc.2011.6169331
https://doi.org/10.1109/imoc.2011.6169331
Publikováno v:
2010 IEEE ANDESCON.
In this paper we proposed a model for describe noise in SiGe HBTs that is implemented in software ADS and analyzed through a rigorous method described by Hudec. Results for both, modeled and analytical results are compared between them and experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff811fd9529176f6358ff3c201beda84
https://doi.org/10.1109/andescon.2010.5632410
https://doi.org/10.1109/andescon.2010.5632410