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Effect of varying the gate voltage scan rate in a MoS2/ferroelectric polymer field effect transistor
Publikováno v:
Ferroelectrics. 550:1-11
A ferroelectric FET using MoS2 and PVDF-TrFE was fabricated, and the effects of varying the gate voltage scan rate from 200 mV/s to 4 mV/s investigated. Charge mobility, sub-threshold voltage swing...
Autor:
Anamaris Melendez, Nicholas J. Pinto, Luis M. Rijos, Angelo Porcu, Naomi M. Rivera, Kelotchi S. Figueroa, Idalia Ramos
Publikováno v:
Journal of Applied Polymer Science. 138:50361
Autor:
Nicholas J. Pinto, Luis M. Rijos
Publikováno v:
physica status solidi (a). 216:1900358