Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Luis M. Rijos"'
Effect of varying the gate voltage scan rate in a MoS2/ferroelectric polymer field effect transistor
Publikováno v:
Ferroelectrics. 550:1-11
A ferroelectric FET using MoS2 and PVDF-TrFE was fabricated, and the effects of varying the gate voltage scan rate from 200 mV/s to 4 mV/s investigated. Charge mobility, sub-threshold voltage swing...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e71c055fa1b6f3feae82da8e9ed54e4
https://doi.org/10.1080/00150193.2019.1652493
https://doi.org/10.1080/00150193.2019.1652493
Autor:
Anamaris Melendez, Nicholas J. Pinto, Luis M. Rijos, Angelo Porcu, Naomi M. Rivera, Kelotchi S. Figueroa, Idalia Ramos
Publikováno v:
Journal of Applied Polymer Science. 138:50361
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc23a3d27f4750144ec9371d7f8b426e
https://doi.org/10.1002/app.50361
https://doi.org/10.1002/app.50361
Autor:
Nicholas J. Pinto, Luis M. Rijos
Publikováno v:
physica status solidi (a). 216:1900358
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c9860c4625383ec371592a26cdb74a
https://doi.org/10.1002/pssa.201900358
https://doi.org/10.1002/pssa.201900358
Autor:
Rijos, Luis M., Figueroa, Kelotchi S., Porcu, Angelo, Rivera, Naomi M., Meléndez, Anamaris, Ramos, Idalia, Pinto, Nicholas J.
Publikováno v:
Journal of Applied Polymer Science; 5/10/2021, Vol. 138 Issue 18, p1-6, 6p
Autor:
Pinto, Nicholas J., Rijos, Luis M., Zhao, Meng-Qiang, Parkin, William M., Johnson, A.T. Charlie
Publikováno v:
Ferroelectrics; 2019, Vol. 550 Issue 1, p1-11, 11p
Autor:
Rijos, Luis M., Pinto, Nicholas J.
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Oct2019, Vol. 216 Issue 20, pN.PAG-N.PAG, 1p