Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

Autor: Mireia Bargallo Gonzalez, Enrique Miranda, Cesar Vaca, Salvador Dueñas, Luis Bailón, Héctor García, Francesca Campabadal, Helena Castán

Publikováno v: IEEE Transactions on Electron Devices. 63:1877-1883

Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current–voltage ( $I$ – $V$ ) curve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3799eb56c8471e4dcab16f53f7348787
https://doi.org/10.1109/ted.2016.2546898

Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

Autor: Helena Castán, Jekaterina Kozlova, Luis Bailón, Jaan Aarik, Kaupo Kukli, Aile Tamm, Kenichiro Mizohata, Salvador Dueñas, Héctor García

Publikováno v: Microelectronic Engineering. 147:55-58

Display Omitted Dysprosium-doped zirconium oxide thin films were grown by atomic layer deposition (ALD).All films are crystalline and contained tetragonal or cubic phase.Current and charge measurements hysteresis cycles have been observed.Antiferroel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f999b4a5d30d78ea1944204884d84ae8
https://doi.org/10.1016/j.mee.2015.04.022

2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

Autor: Helena Castán, M. Zabala, Joan Marc Rafi, Hidenori Ohyama, Kenichiro Takakura, Héctor García, Salvador Dueñas, Francesca Campabadal, O. Beldarrain, Luis Bailón, Isao Tsunoda

Publikováno v: Thin Solid Films. 534:482-487

2 MeV electron irradiation effects on the electrical properties of Al 2 O 3 and HfO 2 -based metal–insulator–semiconductor capacitors have been studied. High-k dielectrics were directly grown on silicon by atomic layer deposition. Capacitors were

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::226904ede602206c096857a0b3ab3b8a
https://doi.org/10.1016/j.tsf.2013.02.004

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Autor: Luis Bailón, E. Pérez, Helena Castán, E. García-Hemme, R. García-Hernansanz, D. Montero, Héctor García, Javier Olea, Salvador Dueñas, Germán González-Díaz

Publikováno v: E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Journal of Applied Physics, ISSN 0021-8979, 2015, Vol. 18, No. 24
Archivo Digital UPM
Universidad Politécnica de Madrid
E-Prints Complutense. Archivo Institucional de la UCM
instname

The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (1013cm-2 and 1014cm-2) are st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8291896ccf3bd535023e976327a90e1f
https://eprints.ucm.es/35736/

Electrical Characterization of High-Pressure Reactive Sputtered Sc2O3 Films on Silicon

Autor: Salvador Dueñas, P. C. Feijoo, A. Gómez, Enrique San Andrés, Álvaro del Prado, Maria Toledano-Luque, Hector H. Garcia, Helena Castán, M. L. Lucía, Luis Bailón

Publikováno v: ECS Transactions. 28:287-297

Al/ScOx/NiOx/n-Si and Al/ScOx/SiOx/n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high pressure sputtering on different substrates to study the dielectric/insulator interface quality. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f62ffdde44b88a529f1aa71f897202cc
https://doi.org/10.1149/1.3375614