Temperature dependence of the on-state voltage drop in field-stop IGBTs

Autor: Andrea Irace, Carmelo Sanfilippo, Michele Riccio, Luigi Merlin, G. Breglio, Luca Maresca, P. Mirone

Insulated Gate Bipolar Transistor (IGBT) is the reference design for power semiconductor switches in the range of the medium-high power applications. Different designs were proposed along the development story of this device, but the actual trend is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92dfee052bd59d90ed85fe3f4f98d0a0
http://hdl.handle.net/11588/775185

Wafer Level Integration of 3-D Heat Sinks in Power ICs

Autor: Candido Pirri, Luciano Scaltrito, Carmelo Sanfilippo, G. Richieri, Denis Perrone, Simone Luigi Marasso, Isabella Para, M. G. Gentile, Diego Pugliese, Matteo Cocuzza, Sergio Ferrero, Luigi Merlin

Publikováno v: I.E.E.E. transactions on electron devices 64 (2017): 4226–4232. doi:10.1109/TED.2017.2732733
info:cnr-pdr/source/autori:Para, Isabella; Marasso, S. L.; Perrone, D.; Gentile, M. G.; Sanfilippo, C.; Richieri, Giovanni; Merlin, Luigi; Pugliese, D.; Cocuzza, M.; Ferrero, S.; Scaltrito, L.; Pirri, C. F./titolo:Wafer Level Integration of 3-D Heat Sinks in Power ICs/doi:10.1109%2FTED.2017.2732733/rivista:I.E.E.E. transactions on electron devices/anno:2017/pagina_da:4226/pagina_a:4232/intervallo_pagine:4226–4232/volume:64

In this paper, an innovative process flow developed to improve the thermal resistance of power ICs was presented. In this field, one of the major device failure mechanisms is related to the high temperatures reached during the working cycles due to t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6d8ddbfebeb3b4d02985b6c04e3f363
http://hdl.handle.net/11583/2693808

Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling

Autor: Vincenzo d'Alessandro, Rossano Carta, Andrea Irace, Luigi Merlin, Diego Raffo, Giovanni Breglio, A. Bricconi, Paolo Spirito

Publikováno v: Materials Science Forum. :1151-1154

The electrothermal behavior of 4H-SiC 600 V Schottky diodes operated in forward mode is analyzed through numerical and analytically-based simulations. It is shown that the unexpected occurrence of voltage surges systematically detected in state-of-th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a7536e2851aa8a95bca49424cb351576
https://doi.org/10.4028/www.scientific.net/msf.527-529.1151

Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes

Autor: Mauro Furno, Rossano Carta, Federica Cappelluti, Luigi Merlin, Laura Bellemo, Giovanni Ghione, Fabrizio Bonani, C. Bocchiola

Publikováno v: Microelectronics Journal. 37:190-196

The paper presents the results of the application of physics-based mixed-mode simulations to the analysis and optimization of the reverse recovery for Si-based fast recovery diodes (FREDs) using Platinum (Pt) lifetime killing. The trap model paramete

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19177c32f2694dfaea70bb7de6bdfa3b
https://doi.org/10.1016/j.mejo.2005.09.026

Structural characterisation of nickel silicide performed by two-dimensional X-ray microdiffraction

Autor: Sergio Ferrero, Elza Bontempi, Umberto Maria Meotto, Carlo Ricciardi, Luigi Merlin, Luciano Scaltrito, G. Richieri, Paolo Colombi, Laura E. Depero, Samuele Porro

Publikováno v: Università degli Studi di Brescia-IRIS

Thin films of nickel were grown on highly n-doped 4H-SiC bulk wafers by thermal evaporation in vacuum. Thermal treatments between 673 and 1323 K have been performed in order to study the structure and microstructure of the films. By XRD2 analysis, it

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10018a76c0dec77c1ec216ddb6356b34
https://doi.org/10.1016/j.mseb.2004.07.071