Controlled SOI nanopatterning for GaN pendeo-epitaxy

Autor: Mrad Mrad, Kilian Baril, Matthew Charles, Jesus Zuniga Perez, Sébastien Labau, Marie Panabiere, Camille Petit-Etienne, Blandine Alloing, Gauthier Lefevre, Ludovic Dupré, Guy Feuillet, Cécile Gourgon

Publikováno v: Micro and Nano Engineering, Vol 14, Iss , Pp 100110- (2022)

Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crysta

Externí odkaz: https://doaj.org/article/5c4484c8129242a9a049a3aed1eb8e47

59-4: Invited Paper: Electro-optical size-dependence investigation in GaN micro-LED devices

Autor: Anis Daami, François Templier, François Olivier, Ludovic Dupré, Franck Henry

Publikováno v: SID Symposium Digest of Technical Papers. 49:790-793

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55e72d80de1d9f919ce9cb802d6c3deb
https://doi.org/10.1002/sdtp.12325

19-6: Invited Paper : A Novel Process for Fabricating High-Resolution and Very Small Pixel-pitch GaN LED Microdisplays

Autor: Lamine Benaissa, François Templier, Matthew Charles, Christine Di Nardo, Bernard Aventurier, Ludovic Dupré, Anis Daami, Franck Henry

Publikováno v: SID Symposium Digest of Technical Papers. 48:268-271

A new approach for fabricating very-small pixel pitch GaN microdisplays is proposed. MicroLEDS obtained from silicon grown epi GaN layers exhibit performances comparable to those obtained on classical sapphire templates. This technology shows very gr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::412be7dd4932933198d546638a67d64b
https://doi.org/10.1002/sdtp.11684

Green InGaN/GaN based LEDs: high luminance and blue shift

Autor: François Olivier, Ludovic Dupré, Francois Templier, Stéphanie Le Calvez, Anis Daami, Christophe Licitra, Franck Henry

Publikováno v: Gallium Nitride Materials and Devices XIV
Gallium Nitride Materials and Devices XIV, SPIE, Feb 2019, San Francisco, United States. pp.21, ⟨10.1117/12.2509396⟩

Proceedings of SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180M (1 March 2019); International audience; We report in this paper electro-optical results on InGaN/GaN based green micro light-emitting diodes (µLEDs). Current-light-voltage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f62cc76808bd047580d038d258b5f201
https://hal-cea.archives-ouvertes.fr/cea-02941414

In Situ Investigation of the Early-Stage Growth of Nanoporous Alumina

Autor: Thérèse Gorisse, Alessandro Coati, Alina Vlad, Yves Garreau, Ludovic Dupré, Marc Zelsmann, Denis Buttard

Publikováno v: Journal of Nanomaterials
Journal of Nanomaterials, 2018, 2018, pp.1-9. ⟨10.1155/2018/6428271⟩
Journal of Nanomaterials, Hindawi Publishing Corporation, 2018, 2018, pp.1-9. ⟨10.1155/2018/6428271⟩
Journal of Nanomaterials, Vol 2018 (2018)

International audience; We report the successful use of in situ grazing incidence small-angle X-ray scattering to follow the anodization of aluminum. A dedicated electrochemical cell was designed and developed for this purpose with low X-ray absorpti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2edfe40bad1fe0856d463344e7bcd6c4
https://hal.univ-grenoble-alpes.fr/hal-01954874/document