Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Lucovsky, Gerald"'
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-
Externí odkaz:
http://arxiv.org/abs/1011.4386
Autor:
Siemons, Wolter, Koster, Gertjan, Yamamoto, Hideki, Harrison, Walter A., Lucovsky, Gerald, Geballe, Theodore H., Blank, Dave H. A., Beasley, Malcolm R.
Publikováno v:
Phys. Rev. Lett. 98, 196802 (2007)
As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of o
Externí odkaz:
http://arxiv.org/abs/cond-mat/0612223
Autor:
Phillips James, Lucovsky Gerald
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 3, Pp 550-558 (2010)
Abstract This paper distinguishes between two different scales of medium range order, MRO, in non-crystalline SiO2: (1) the first is ~0.4 to 0.5 nm and is obtained from the position of the first sharp diffraction peak, FSDP, in the X-ray diffraction
Externí odkaz:
https://doaj.org/article/1254f0b001184a53b18e1741baa0bf87
Autor:
Lucovsky, Gerald, Chung, Kwun-Bum, Miotti, Leonardi, Bastos, Karen Pas, Amado, Carolina, Schlom, Darrell
Publikováno v:
In Solid State Electronics 2009 53(12):1273-1279
Autor:
Lucovsky, Gerald, Phillips, Jim C.
Publikováno v:
In Journal of Non-Crystalline Solids 2009 355(37):1786-1791
Autor:
Lucovsky, Gerald, Phillips, James C.
Publikováno v:
In Journal of Non-Crystalline Solids 1 May 2008 354(19-25):2753-2756
Autor:
Lucovsky, Gerald, Phillips, James C.
Publikováno v:
In Journal of Non-Crystalline Solids 1 May 2008 354(19-25):2702-2705
Publikováno v:
In Journal of Non-Crystalline Solids 1 May 2008 354(19-25):2724-2727