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The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers

Autor: J. F. Ryan, C. Kiener, Lucio Rota, A. C. Maciel, J. M. Freyland

We report a theoretical investigation of carrier trapping in GaAs v-groove quantum wire structures. Our results show that trapping is fast in wires confined by AlGaAs alloy barriers where the growth process creates a Ga-rich vertical quantum well at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33cea93be848b9e3d84427e5cfb5c3e9
https://ora.ox.ac.uk/objects/uuid:f5530798-33b5-4f24-bdee-d234c1f9861d

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Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence

Autor: Lucio Rota, Benoit Deveaud, M. Hartig, Robert A. Taylor, Stefan Haacke

Using luminescence upconversion with 100 fs resolution, we have investigated the intersubband scattering of electrons in GaAs quantum wells (QWs). The energy separations between the first and second confined electron subband (E(12)) were more or less

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d03952176c6903fd7d5154e01ac35eab
https://doi.org/10.1006/spmi.1996.0172

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Femtosecond optical absorption measurements of electron-phonon scattering in GaAs quantum wells

Autor: C. T. Foxon, Lucio Rota, K. Turner, J. F. Ryan, Robert A. Taylor

The results of a combined experimental and theoretical analysis of time-resolved optical absorption in a GaAs quantum well which allowed for the first time a detailed test of the theoretically predicted scattering rates were presented. The results pr

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https://ora.ox.ac.uk/objects/uuid:f0be02ee-b952-450e-a06a-2be7f8787849

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Carrier trapping into quantum wires

Autor: C. Kiener, A. C. Maciel, Denis Martin, J. M. Freyland, F. K. Reinhart, J. F. Ryan, Lucio Rota, U. Marti, K. Turner, F. Morier-Gemoud

Publikováno v: Hot Carriers in Semiconductors ISBN: 9781461380351

Trapping into the active region is one of the most important design considerations in quantum well lasers. This process becomes crucial for the operation of quantum wire devices since the very small active volume demands strong coupling to the extern

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https://ora.ox.ac.uk/objects/uuid:f297315a-ab61-468d-9800-4ae420d3aeab

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Dynamics of electron capture into quantum wires

Autor: K. Turner, J. F. Ryan, F. K. Reinhart, A. C. Maciel, U. Marti, F. Morier‐Gemoud, Denis Martin, Lucio Rota, C. Kiener, J. M. Freyland

Note: Ecole polytech fed lausanne,dept micro & optoelectr,ch-1015 lausanne,switzerland. Ryan, JF, UNIV OXFORD,CLARENDON LAB,DEPT PHYS,PARKS RD,OXFORD OX1 3PU,ENGLAND. ISI Document Delivery No.: TZ177 Cited References: ANTHONY CJ, 1994, SEMICOND SCI T

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https://ora.ox.ac.uk/objects/uuid:82cdbe52-bb5a-4d11-8ee1-56fa816d5f43

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Efficient intersubband scattering via carrier-carrier interaction in quantum wells

Autor: Stefan Haacke, P. E. Selbmann, Robert A. Taylor, Lucio Rota, M. Hartig, Benoit Deveaud

Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO

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https://doi.org/10.1103/physrevlett.80.1940

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Direct observation of femtosecond intervalley scattering in GaSb: Electron-phonon scattering and continuum coherent transients

Autor: Eoin O'Sullivan, Lucio Rota, D.C. Smith, A. C. Maciel, J. F. Ryan

Femtosecond Γ–L intervalley electron scattering has been observed in bulk GaSb and GaSb/AlSb quantum wells using time-resolved differential transmission and Raman spectroscopy. The reverse process is found to occur on a significantly longer time s

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https://ora.ox.ac.uk/objects/uuid:7e685206-83bd-42d5-8c27-9a39d870e0ed

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3D-to-1D carrier scattering in GaAs V-groove quantum wires

Autor: J. F. Ryan, Lucio Rota, K. Turner, U. Marti, F. Morier-Gemoud, A. C. Maciel, Fk K. Reinhart, Denis Martin, C. Kiener, J. M. Freyland

Epitaxial growth on nonplanar substrates is an attractive method for producing high quality quantum wire structures for applications in low-threshold lasers. However, a crucial factor in this application is the transfer of carriers between extended (

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https://doi.org/10.1016/0038-1101(95)00260-x

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Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs) n quantum wire structures

Autor: C. Kiener, Lucio Rota, Denis Martin, F. Morier‐Gemoud, A. C. Maciel, J. F. Ryan, U. Marti, J. M. Freyland, Fk K. Reinhart

Raman spectroscopy has been used to measure phonons in GaAs v-groove quantum wire structures containing (001) and (111) GaAs/AlAs superlattice barrier regions. Resonance enhancement permits the identification of modes in different regions of the stru

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https://ora.ox.ac.uk/objects/uuid:245286f7-859c-4771-90ea-d2a9378561e1

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