Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Lucien Bouchard"'
Autor:
Michael Green, Lucien Bouchard, Young Ham, Wei-Cheng Shiu, Hung-Chang Szu, Eric Huang, Yeu Dong Gau, Chih-Ying Tsai, Chris Progler, Tsu-Wen Huang, Chun-Cheng Liao, Mohamed Ramadan
Publikováno v:
Photomask Technology 2020.
Advanced DRAM technology relies heavily on 193nm immersion lithography. Negative tone develop (NTD) layers are becoming increasingly important particularly in nodes below 20nm. NTD is particularly useful for patterning holes on the wafer. Cut layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f420b945fe1528215621004f82b6b7e8
https://doi.org/10.1117/12.2574713
https://doi.org/10.1117/12.2574713
Autor:
Lucien Bouchard
Publikováno v:
SPIE Proceedings.
Next Generation Lithography (NGL) technologies require masks that are significantly different from each other and from conventional photomasks but possess many similarities and processing challenges. The Next Generation Lithography Mask Center of Com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe81f6ca76c6d15c7099ea798311fce
https://doi.org/10.1117/12.390052
https://doi.org/10.1117/12.390052
Autor:
Michael J. Trybendis, Christopher Magg, Kevin W. Collins, Michael J. Lercel, Monica Barrett, Kenneth C. Racette, Lucien Bouchard, Mark Lawliss
Publikováno v:
SPIE Proceedings.
Masks for next generation lithographies present difficult technical processing, challenges for meeting the demanding requirements of future lithography. The Next Generation Lithography Mask Center of Competency is applying the proximity x-ray mask te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e49e47936313af26bdcfcd08faa7d56
https://doi.org/10.1117/12.392049
https://doi.org/10.1117/12.392049
Autor:
Kevin W. Collins, Monica Barrett, Kenneth C. Racette, Steven C. Nash, Christopher Magg, Michael J. Trybendis, Neal Caldwell, Lucien Bouchard, Mark Lawliss, Cameron J. Brooks, Michael J. Lercel, Raymond Walter Jeffer
Publikováno v:
SPIE Proceedings.
Mask fabrication is one of the difficult challenges with all Next Generation Lithography (NGL) technologies. X-ray, e-beam projection, and ion-beam projection lithography all use some form of membrane mask, and extreme ultraviolet (EUV) lithography u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7339becf3c46ac78442b10f684a182ca
https://doi.org/10.1117/12.373374
https://doi.org/10.1117/12.373374
Autor:
Chris Magg, Ray Jeffer, Neal Caldwell, Michael J. Trybendis, Monica Barrett, Michael J. Lercel, Kevin W. Collins, Lucien Bouchard
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3210
Masks for electron projection lithography (EPL) require the use of thin membranes for either stencil or all membrane scattering masks. The processes of forming the printable patterns before or after the membrane etch step are compared for EPL stencil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb67d7cef65fa00590c0eb27bdbac0de
https://doi.org/10.1116/1.1314370
https://doi.org/10.1116/1.1314370
Autor:
Lucien Bouchard
Publikováno v:
Les Cahiers de droit. 5:29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::741c722203e800169db33d41d8e0d557
https://doi.org/10.7202/1004175ar
https://doi.org/10.7202/1004175ar
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.