Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Luciano Horiuchi"'
Autor:
M. Sacilotti, Lisandro Pavie Cardoso, Jean Decobert, M. J. S. P. Brasil, P. Ossart, Luciano Horiuchi, J. D. Ganière
Publikováno v:
Journal of Applied Physics. 71:179-186
GaAlAs/GaAs and GaInAs/InP thick layers, single and multiple quantum wells were grown by atmospheric pressure metalorganic vapor phase epitaxy. Auger electron spectroscopy, wedge transmission electron microscopy, x‐ray diffraction, low‐temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074486e3babaf34ff45caa0fee1367b0
https://doi.org/10.1063/1.350734
https://doi.org/10.1063/1.350734
Autor:
Luciano Horiuchi, Pierre Ossart, Jean Decobert, M.J.S.P. Brasil, Lisandro Pavie Cardoso, Jean D. Ganière, Marco Sacilotti
Publikováno v:
Japanese Journal of Applied Physics. 30:L783-L785
We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b9ca4d47dc2856f2e87f8e87c0c913d
https://doi.org/10.1143/jjap.30.l783
https://doi.org/10.1143/jjap.30.l783