Surface Enhanced Raman Spectroscopy of Pyridine on CdSe/ZnBeSe Quantum Dots Grown by Molecular Beam Epitaxy

Autor: Maria C. Tamargo, Xuecong Zhou, John R. Lombardi, Fleumingue Jean-Mary, Lucia G. Quagliano, Richard Livingstone

Publikováno v: Journal of physical chemistry. C 114 (2010): 17460–17464. doi:10.1021/jp105619m
info:cnr-pdr/source/autori:Richard Livingstone; Xuecong Zhou; Maria C. Tamargo; John R. Lombardi; Lucia G. Quagliano; Fleumingue Jean-Mary/titolo:Surface Enhanced Raman Spectroscopy of Pyridine on CdSe%2FZnBeSe Quantum Dots Grown by Molecular Beam Epitaxy/doi:10.1021%2Fjp105619m/rivista:Journal of physical chemistry. C/anno:2010/pagina_da:17460/pagina_a:17464/intervallo_pagine:17460–17464/volume:114

Using surface enhanced Raman spectroscopy (SERS), we observed Raman enhancements (104-105) for pyridine molecules adsorbed on II-VI semiconductor quantum dots on (uncapped CdSe/ZnBeSe) produced by molecular beam epitaxy. When a monolayer of pyridine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc71b933a3caf0fc3a3d2783d1077e32
https://doi.org/10.1021/jp105619m

Detection of As2O3 arsenic oxide on GaAs surface by Raman scattering

Autor: Lucia G Quagliano

Publikováno v: Applied Surface Science. 153:240-244

GaAs samples after wet chemical etching in nitric acid have been investigated for the first time by Raman spectroscopy. The GaAs surface prepared by this chemical etching results in a rough surface structure with an intrinsic chemically formed oxide

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12bac1ef7157307401b3a5885925f783
https://doi.org/10.1016/s0169-4332(99)00355-4

InAs on InP: Intermediate alloy formation and interface vibrations

Autor: Bernard Jusserand, Daniela Orani, Lucia G. Quagliano

Publikováno v: Physical Review B. 56:4919-4924

We present a detailed investigation of the vibrational modes of single thin InAs layers directly grown on InP substrate. The Raman spectra have revealed the presence of features besides the longitudinal-optical and transverse-optical modes related to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21b1aad0afb3209b3d2b24f65a7f4677
https://doi.org/10.1103/physrevb.56.4919

Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E

Autor: M. Gabriella Simeone, Lucia G. Quagliano, Narciso Gambacorti, Marco Zugarini, M. Rita Bruni

Publikováno v: Superlattices and Microstructures. 17:27-30

We analyzed using the Raman technique a series of single quantum wells of InAs/In 0.53Ga0.47As at different thicknesses of InAs layer grown on a (100) InP substrate by MBE. These high lattice mismatch systems are particularly interesting for potentia

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https://doi.org/10.1006/spmi.1995.1007

Damping of optical phonons in Ga_{1-x}Al_{x}As alloys

Autor: Bernard Jusserand, Richard Planel, Lucia G. Quagliano, Francis Mollot, Guy Le Roux

Publikováno v: Physical Review Letters. 67:2803-2806

We measure for the first time the average mechanical response of a 111-V mixed crystal with a two-mode behavior, Ga 1-x Al x As, to a vibrational excitation at frequencies in the gap between the two optical-phonon branches. These frequencies are sele

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https://doi.org/10.1103/physrevlett.67.2803