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Autor:
Ivanova, Z I, Kovrigin, A I, Luchinskiĭ, G V, Rashkovich, Leonid N, Rubinina, N M, Kholodnykh, A I
Publikováno v:
Soviet Journal of Quantum Electronics; May1980, Vol. 10 Issue 5, p577-580, 4p
Autor:
Pergament, Alexander
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially fo
