Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD

Autor: Losurdo, M., MARIAMICHELA GIANGREGORIO, Luchena, M., Capezzuto, P., Bruno, G., Barreca, D., Gasparotto, A., Tondello, E.

Publikováno v: Scopus-Elsevier
2003 MRS Fall Meeting, Boston, USA, 2003
info:cnr-pdr/source/autori:Losurdo M., Giangregorio M.M., Luchena M., Capezzuto P., Bruno G., Barreca D., Gasparotto A., Tondello E./congresso_nome:2003 MRS Fall Meeting/congresso_luogo:Boston, USA/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
Materials Research Society symposia proceedings 786 (2004): E315.1–E315.6.
info:cnr-pdr/source/autori:M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, D. Barreca, A. Gasparotto, E. Tondello/titolo:Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD/doi:/rivista:Materials Research Society symposia proceedings/anno:2004/pagina_da:E315.1/pagina_a:E315.6/intervallo_pagine:E315.1–E315.6/volume:786

HfO2 dielectric layers have been grown on p-type Si(100) by plasma enhanced chemical vapor deposition (PE-CVD), using Ar-O2 plasmas and hafnium(IV) tetra-t-butoxide as precursors. In-situ control of the plasma phase is carried out by optical emission

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8761a2b57e2e60cf48657dbcaa3f82e5
http://hdl.handle.net/11577/2447583

Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD.

Autor: Losurdo, M., Giangregorio, M. M., Luchena, M., Capezzuto, P., Bruno, G., Barreca, D., Gasparotto, A., Tondello, E.

Publikováno v: MRS Online Proceedings Library; 2003, Vol. 786 Issue 1, p1-6, 6p