Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Lucas Nyssens"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 650-657 (2023)
Advances in CMOS technology have enabled MOSFET with cutoff and maximum oscillation frequencies (ft and fmax) in the 400 GHz range, thus opening the path to CMOS-based applications at millimeter-wave (mm-wave) and sub-THz frequencies. Accurate compac
Externí odkaz:
https://doaj.org/article/617cd55939e5468097b07496546d68a5
Autor:
Valeriya Kilchytska, Sergej Makovejev, Babak Kazemi Esfeh, Lucas Nyssens, Arka Halder, Jean-Pierre Raskin, Denis Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)
This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of t
Externí odkaz:
https://doaj.org/article/cdb66ae5dc3c41f7ad244224734162ac
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Denis Flandre, Valeriya Kilchytska, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 646-654 (2020)
This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax), as well as par
Externí odkaz:
https://doaj.org/article/604d5dc80ab54f939d62a7e5ef122832
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed t
Externí odkaz:
https://doaj.org/article/0272cd05220a4e07b332e6db4491c173
Publikováno v:
IEEE Electron Device Letters, Vol. 42, no.5, p. 665-668 (2021)
IEEE Electron Device Letters
IEEE Electron Device Letters
This paper proposes an original approach to separately characterize self-heating and substrate effects in Fully-Depleted Silicon-on-Insulator (FD-SOI) devices. As both dynamic self-heating and drain to source coupling through the back-gate and substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8956b4480c5995f92d8b8eac2c1c9fc
https://doi.org/10.1109/led.2021.3071272
https://doi.org/10.1109/led.2021.3071272
Autor:
Sergej Makovejev, Denis Flandre, Arka Halder, Jean-Pierre Raskin, Valeriya Kilchytska, Lucas Nyssens, Babak Kazemi Esfeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 500-510 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 500-510 (2021)
This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c6284e2ef1479dd0b8f2e0153f7c067
https://ieeexplore.ieee.org/document/9349757/
https://ieeexplore.ieee.org/document/9349757/
Publikováno v:
IEEE Microwave and Wireless Components Letters, Vol. 32, no.6, p. 704-707 (2022)
vol. 32, no. 6, pp. 704-707
vol. 32, no. 6, pp. 704-707
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::849ca283c1eba84014c58386ea6665de
https://hdl.handle.net/2078.1/269241
https://hdl.handle.net/2078.1/269241
Autor:
Arka Halder, Martin Vanbrabant, Jean-Pierre Raskin, Martin Rack, Lucas Nyssens, Valeriya Kilchytska
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Proceedings of VLSI-TSA, p. 1-2 (2021)
Proceedings of VLSI-TSA, p. 1-2 (2021)
Back-gate and substrate networks modeling of FD SOI MOSFETs is crucial for RF and mm-wave applications due to their impact on RF performance. However, usual substrate models rely on the source to drain coupling through the back-gate, which appears in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d64bc010de39f083f4e7deef76086bf
https://doi.org/10.1109/vlsi-tsa51926.2021.9440125
https://doi.org/10.1109/vlsi-tsa51926.2021.9440125
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
FD-SOI is a promising technology for integrating mm-wave front- end circuitry. In this paper, fully-differential SPST and SP4T switches are designed with wideband operation (DC up to 50 GHz) using GlobalFoundries’ 22FDX® platform. Based on a diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86d16c1343f30ba5c42d3d7195060704
https://doi.org/10.1109/vlsi-tsa51926.2021.9440095
https://doi.org/10.1109/vlsi-tsa51926.2021.9440095
Autor:
Jean-Pierre Raskin, Arka Halder, Martin Rack, Lucas Nyssens, Dimitri Lederer, Valeriya Kilchytska
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Vol. 184, p. 108088 (2021)
Solid-State Electronics, Vol. 184, p. 108088 (2021)
This work studies the effect of heat sink in the back-end of line (BEOL) on the self-heating (SH) parameters of transistors in a Fully Depleted Silicon-on-Insulator (FDSOI) technology. The RF characterization technique, which involves S-parameter mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43235f5f58b09caad6d25d7776d1ba28