Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Lucas Bruas"'
Publikováno v:
Microscopy and Microanalysis. 28:480-482
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4e1053e876560ea62ad7032a6f3ced
https://doi.org/10.1017/s1431927622002586
https://doi.org/10.1017/s1431927622002586
Autor:
Bruno C. da Silva, Zahra S. Momtaz, Lucas Bruas, Jean-Luc Rouviére, Hanako Okuno, David Cooper, Martien I. den-Hertog
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩
Applied Physics Letters, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p–n junction. The effect of different STEM modes and the trade-off between spatial resolution and ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cf4f0ce58d5aa03b87376b5b3dde707
https://doi.org/10.1063/5.0104861
https://doi.org/10.1063/5.0104861
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2021, 129 (13), pp.135701. ⟨10.1063/5.0040243⟩
Journal of Applied Physics, American Institute of Physics, 2021, 129 (13), pp.135701. ⟨10.1063/5.0040243⟩
Journal of Applied Physics, 2021, 129 (13), pp.135701. ⟨10.1063/5.0040243⟩
Journal of Applied Physics, American Institute of Physics, 2021, 129 (13), pp.135701. ⟨10.1063/5.0040243⟩
International audience; A silicon p-n junction has been mapped using electron beam induced current in both a scanning transmission electron microscope (STEM) and a conventional scanning electron microscope (SEM). In STEM, the transmission of a higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2852357ef9b4563a80a531cc0b08020
https://doi.org/10.1063/5.0040243
https://doi.org/10.1063/5.0040243