Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Luca Verdi"'
Autor:
Francesca Avella, Akshit Gupta, Clara Peretti, Gianmaria Fulici, Luca Verdi, Annamaria Belleri, Francesco Babich
Publikováno v:
Heritage, Vol 4, Iss 4, Pp 3442-3468 (2021)
Children spend a large part of their growing years in schools, and as they are more sensitive to some pollutants than adults, it is essential to monitor and maximize the indoor air quality (IAQ) in classrooms. Many schools are located in historic and
Externí odkaz:
https://doaj.org/article/33d2f53d37ca4c969f5619a3ceb85e27
Autor:
Gianmaria Fulici, Francesca Avella, Clara Peretti, Luca Verdi, Annamaria Belleri, Akshit Gupta, Francesco Babich
Publikováno v:
Heritage
Volume 4
Issue 4
Pages 191-3468
Heritage, Vol 4, Iss 191, Pp 3442-3468 (2021)
Volume 4
Issue 4
Pages 191-3468
Heritage, Vol 4, Iss 191, Pp 3442-3468 (2021)
Children spend a large part of their growing years in schools, and as they are more sensitive to some pollutants than adults, it is essential to monitor and maximize the indoor air quality (IAQ) in classrooms. Many schools are located in historic and
Autor:
Massimo Faure Ragani, M. Magnoni, Concettina Giovani, Elena Caldognetto, Luca Verdi, Silvia Bucci, Ilaria Peroni, Giuseppe Candolini, F. Trotti, Cristina Nuccetelli, Massimo Garavaglia, Rossella Rusconi
Publikováno v:
Construction and Building Materials. 183:264-269
The use of woodchips of local origin for heating purposes is a diffused practice in some areas, like northern Italian alpine and sub-alpine zones, where large woods and forests extensions occur. In recent years, many thermal plants producing energy u
Autor:
Antonio Miotello, Luca Verdi
Publikováno v:
Philosophical Magazine B. 71:741-750
The random network of non-crystalline SiO2, like fused silica or the oxide grown on a Si substrate in dry oxygen atmosphere, is investigated on the basis of the transport properties of hydrogen (fused silica) and oxygen (oxide layer on Si substrate).
Autor:
Luca Verdi, Antonio Miotello
Publikováno v:
Physical Review B. 51:5469-5472
We propose a model for the silicon oxidation process in dry atmosphere, where the growing oxide is seen not as a continuous random lattice but instead as a granular random lattice through which oxygen diffusion occurs. A reactive layer connects the o
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 91:648-653
The rate of oxide growth on Si, in dry atmosphere, shows two regimes: in the first (for thin oxide up to ∼ 30 nm) the oxide is formed very quickly while in the second the rate decreases markedly as the thickness of the oxide layer increases. To des
Publikováno v:
Thin Solid Films. 241:383-387
Silicon oxidation involves physico-chemical phenomena which may be grouped into three categories: (1) surface effects occurring at the oxide/gas interface (in dry oxygen ambient) and mainly characterized by a sticking coefficient; (2) bulk effects co
Autor:
Antonio Miotello, Luca Verdi
Publikováno v:
Physical Review B. 47:14187-14192
We discuss a possible mechanism leading to the dimerization of hydrogen, produced by irradiation, in OH-containing \ensuremath{\alpha}-${\mathrm{SiO}}_{2}$. We describe the hydrogen-annealing behavior by combining both fractal and classical kinetics
Autor:
Luca Verdi, Antonio Miotello
Publikováno v:
Physica A: Statistical Mechanics and its Applications. 191:182-185
We present new equations which describe “classicalrd and “fractal” kinetics occurring simultaneously. With these new equations we are able to reproduce the long-time annealing behavior of radiation-induced atomic hydrogen in OH-containing high-