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Akademický článek

Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

Autor: Luca Nela, Catherine Erine, Maria Vittoria Oropallo, Elison Matioli

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1066-1075 (2021)

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly d

Externí odkaz: https://doaj.org/article/3d8e007afccb4db1b9766f1ea6e1fdf8

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Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

Autor: Taifang Wang, Yuan Zong, Luca Nela, Elison Matioli

Publikováno v: IEEE Electron Device Letters. 43:1523-1526

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0545ba7e4371310cb50791b7e032a32f
https://doi.org/10.1109/led.2022.3189635

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P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Autor: Luca Nela, Jun Ma, Mohammad Samizadeh Nikoo, Elison Matioli, Catherine Erine, Pirouz Sohi, Minghua Zhu

Publikováno v: IEEE Electron Device Letters

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage ( ${V}_{\text {TH}}$ ) and low on-resistance ( ${R}_{ {ON}}$ ). The p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3bef9a28cfc2ba3f39156a752a4db3d
https://doi.org/10.1109/led.2020.3037026

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$C_{\text{oss}}$ Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Autor: Luca Nela, Elison Matioli, Nirmana Perera, Mohammad Samizadeh Nikoo, Armin Jafari

Publikováno v: IEEE Transactions on Power Electronics. 35:12585-12589

The dissipated energy ( $E_{\text{diss}}$ ) related to the resonant charging–discharging of a transistor output capacitance becomes a dominant loss factor for power converters operating in the MHz range. A recent letter has introduced a small-signa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2045bb41b5cfc31c6434f35f464ee753
https://doi.org/10.1109/tpel.2020.2990370

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Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Autor: Georgios Kampitsis, Jun Ma, Elison Matioli, Luca Nela

Publikováno v: IEEE Electron Device Letters

Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e589e8a3428a21acc43cf3c6e986ac1
https://doi.org/10.1109/led.2019.2957700

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High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Autor: Halil Kerim Yildirim, Remco van Erp, Peng Xiang, Catherine Erine, Kai Cheng, Elison Matioli, Jun Ma, Luca Nela

Publikováno v: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b6e55f177c8c66a927bbef88a031b1d
https://doi.org/10.23919/ispsd50666.2021.9452238

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LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Autor: Mohammad Samizadeh Nikoo, Taifang Wang, Elison Matioli, Luca Nela

Publikováno v: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f52717b0c3fe5fa0a58fe937ea2c7a69
https://doi.org/10.23919/ispsd50666.2021.9452252

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GaN-based power devices: Physics, reliability, and perspectives

Autor: Gaudenzio Meneghesso, Idriss Abid, Carlo De Santi, Giovanni Verzellesi, Alessandro Chini, Marcello Cioni, Luca Nela, Enrico Zanoni, Nicolo Zagni, Riyaz Abdul Khadar, Matteo Meneghini, Farid Medjdoub, Matteo Buffolo, Elison Matioli

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩
Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩

International audience; Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest en

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67d2b99745228cef3628b64a3a5f0750
https://hal.archives-ouvertes.fr/hal-03421528

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Bringing the Heat Sink Closer to the Heat: Evaluating Die-Embedded Microchannel Cooling of GaN-on-Si Power Devices

Autor: Luca Nela, Georgios Kampitsis, Nirmana Perera, Reza Soleimanzadeh, Remco van Erp, Elison Matioli

Publikováno v: 2020 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::994d224b605e5b8d59447ff02caf8edf
https://doi.org/10.1109/therminic49743.2020.9420501

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Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays

Autor: George S. Tulevski, Qing Cao, Jianshi Tang, Damon B. Farmer, Shu-Jen Han, Luca Nela, Keith A. Jenkins

Publikováno v: Nature Electronics. 1:191-196

High-performance logic circuits that are constructed on flexible or unconventional substrates are required for emerging applications such as real-time analytics. Carbon nanotube thin-film transistors (TFTs) are attractive for these applications becau

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2f1f01a8e33a0987022a3d672196cdc
https://doi.org/10.1038/s41928-018-0038-8

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