Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Luca Grella"'
Publikováno v:
Scanning. 25:300-308
We present a three-dimensional simulation of scanning electron microscope (SEM) images and surface charging. First, the field above the sample is calculated using Laplace's equation with the proper boundary conditions; then, the simulation algorithm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9a95affdff4c759730d064854a57104
https://doi.org/10.1002/sca.4950250606
https://doi.org/10.1002/sca.4950250606
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 519:242-250
Scanning electron microscope (SEM) based CD control and wafer inspection has an increasingly active role in the semiconductor industry. Current design rules require a CD control with a precision in the nanometer range. In order to achieve this precis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2874ca7ddef2a411c631d6357fa53295
https://doi.org/10.1016/j.nima.2003.11.161
https://doi.org/10.1016/j.nima.2003.11.161
Autor:
Shy-Jay Lin, Luca Grella, T. P. Wang, William M. Tong, Jaw-Jung Shin, Mark A. McCord, Paul Petric, Allen Carroll, Wen-Chuan Wang, Kirk Murray, Tsung-Hsin Yu, Christopher F. Bevis, Tze-Chiang Huang
Publikováno v:
SPIE Proceedings.
Reflective electron-beam lithography (REBL) employs a novel device to impress pattern information on an electron beam. This device, the digital pattern generator (DPG), is an array of small electron reflectors, in which the reflectance of each mirror
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f29216a9d23d5afd41103ff304cd190
https://doi.org/10.1117/12.2048528
https://doi.org/10.1117/12.2048528
Autor:
Shy-Jay Lin, Allen Carroll, Alan D. Brodie, Luca Grella, Tsung-Chih Chien, Burn Jeng Lin, Jaw-Jung Shin, Tien-I Bao, Shih-Chi Wang, Chih Wei Lu, Mark A. McCord
Publikováno v:
SPIE Proceedings.
KLA-Tencor is currently developing Reflective Electron Beam Lithography (REBL), targeted as a production worthy multiple electron beam tool for next generation high volume lithography. The Digital Pattern Generator (DPG) integrated with CMOS and MEMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5bd98a0c67f5afede178fb276ce613
https://doi.org/10.1117/12.2045416
https://doi.org/10.1117/12.2045416
Autor:
Shinichi Kojima, Christopher F. Bevis, Thomas Gubiotti, Alan D. Brodie, Mark A. McCord, Luca Grella
Publikováno v:
Alternative Lithographic Technologies V.
Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9033a12b7a027bb8086a567b38262d2
https://doi.org/10.1117/12.2011908
https://doi.org/10.1117/12.2011908
Autor:
Allen Carroll, Christopher F. Bevis, Charles T. Rettner, Mark A. McCord, Shinichi Kojima, Paul Petric, Shriyan Sameet K, Upendra Ummethala, Luca Grella
Publikováno v:
Alternative Lithographic Technologies IV.
REBL (Reflective Electron Beam Lithography) is a novel concept for high speed maskless projection electron beam lithography. Originally targeting 45 nm HP (half pitch) under a DARPA funded contract, we are now working on optimizing the optics and arc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d4cb35c58de60bbff253c003fc98ed6
https://doi.org/10.1117/12.919744
https://doi.org/10.1117/12.919744
Autor:
Regina Freed, Allen Carroll, Anthony Cheung, Upendra Ummethala, Alan D. Brodie, Luca Grella, Christopher F. Bevis, Mark A. McCord, Paul Petric
Publikováno v:
Alternative Lithographic Technologies III.
REBL (Reflective Electron Beam Lithography) is a program for the development of a novel approach for highthroughput maskless lithography. The program at KLA-Tencor is funded under the DARPA Maskless Nanowriter Program. A DPG (digital pattern generato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5064e0033231b1939bd8e9758e0da9f8
https://doi.org/10.1117/12.882636
https://doi.org/10.1117/12.882636
Autor:
Anthony Cheung, Marek Zywno, Henry Percy, Christopher F. Bevis, Mark A. McCord, Keith Standiford, Paul Petric, Alan D. Brodie, Luca Grella, Allen Carroll
Publikováno v:
Alternative Lithographic Technologies.
REBL (Reflective Electron Beam Lithography) is being developed for high throughput electron beam direct write maskless lithography. The system is specifically targeting 5 to 7 wafer levels per hour throughput on average at the 45 nm node, with extend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a5510dbc7bbf14b699000eacaa632f6
https://doi.org/10.1117/12.817319
https://doi.org/10.1117/12.817319
Autor:
Salam Harb, Marian Mankos, Luca Grella, Liqun Han, Cory Czarnik, Shinichi Kojima, Vassil Spasov, Ximan Jiang
Publikováno v:
MRS Proceedings. 1088
A novel low energy electron microscope (LEEM) aimed at improving the throughput and extending the applications for semiconductor devices has been developed. A dual beam approach, where two beams with different landing energies illuminate the field of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38dd7046c32af21ca141611027f42cf6
https://doi.org/10.1557/proc-1088-w03-01
https://doi.org/10.1557/proc-1088-w03-01
Autor:
Z. Luo, H. Marchman, J. D. Byers, D. Soltz, Srinivas Vedula, Amir Azordegan, Gian Lorusso, Luca Grella, G. Storms, J. Varner, L. H. A. Leunissen, R. Kuppa
Publikováno v:
SPIE Proceedings.
CD-SEM is currently poised as the primary method of choice for CD metrology because of its nanometer scale spatial resolution, superior precision, and relatively high throughput. However, issues still continue to emerge that can threaten the measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8ce13efbcd42190ea7f5a39e5fa4937
https://doi.org/10.1117/12.656599
https://doi.org/10.1117/12.656599