Next-Value Prediction of Beam Waists From Mixed Pitch Grating Using Simplified Transformer Model

Autor: Yu Dian Lim, Peng Zhao, Luca Guidoni, Jean-Pierre Likforman, Chuan Seng Tan

Publikováno v: IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-9 (2024)

In this study, a simplified transformer model is used to predict the beam waist of 1,092 nm light coupled out from SiN-based mixed pitch gratings at various heights. The beam waists data at various heights above the grating is first compiled. Then, w

Externí odkaz: https://doaj.org/article/44cdfdddd6c54e28b81f34026d82d3b2

Design and Fabrication of Grating Couplers for the Optical Addressing of Trapped Ions

Autor: Yu Dian Lim, Hong Yu Li, Peng Zhao, Jing Tao, Luca Guidoni, Chuan Seng Tan

Publikováno v: IEEE Photonics Journal, Vol 13, Iss 4, Pp 1-6 (2021)

In this work, silicon photonics structures for the optical addressing of trapped ion is developed for quantum computing applications. Grating-waveguide-grating structures of various designs are designed, and fabricated for various radius curvatures o

Externí odkaz: https://doaj.org/article/9fbc2378abd64e1f8a5de683fa2e162d

Surface-Electrode Ion Trap With Ground Structures for Minimizing the Dielectric Loss in the Si Substrate

Autor: Yu Dian Lim, Chuan Seng Tan, Luca Guidoni, Jing Tao, Anak Agung Alit Apriyana, Peng Zhao, Hongyu Li

Publikováno v: IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology, Institute of Electrical and Electronics Engineers, 2020, 10 (4), pp.679-685. ⟨10.1109/TCPMT.2019.2958661⟩

The surface-electrode ion trap is one of the key devices in modern ion-trapping apparatus to host the ion qubits for quantum computing. Surface traps fabricated on the silicon substrate have the versatility for complex electrode fabrication with 3-D

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eba5098a94b4c312ea1396560f1ccb00
https://doi.org/10.1109/tcpmt.2019.2958661

The integration of grounding plane into tsv integrated ion trap for efficient thermal management in large scale quantum computing device

Autor: Peng Zhao, Hong Yu Li, Yu Dian Lim, Wen Wei Seit, Luca Guidoni, Chuan Seng Tan

In this work, we demonstrate the addition of grounding plane into the through silicon via (TSV) integrated ion trap to minimize the ion trap heating by effectively shielding the lossy silicon substrate from RF penetration. Windows are made onto this

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::282c41b0a3645547d9b878c05cc7fedc
https://hdl.handle.net/10356/166181

Heterogenous Integration of Silicon Ion Trap and Glass Interposer for Scalable Quantum Computing Enabled by TSV, Micro-bumps and RDL

Autor: Jing Tao, Yu Dian Lim, Chuan Seng Tan, Luca Guidoni, Peng Zhao, Wen Wei Seit, Hongyu Li

Publikováno v: 2021 IEEE 71st Electronic Components and Technology Conference (ECTC).

In this work, we report the heterogenous integration of ion trap on silicon assembled on glass interposer, where TSV, micro-bumps and redistribution layer are implemented and allow for ion trap design with significantly high flexibility. CMOS-compati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfa39d9d38e0894a4ee115f5698a5d76
https://doi.org/10.1109/ectc32696.2021.00054