Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Luca Chiavarone"'
Autor:
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 524-530 (2023)
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string po
Externí odkaz:
https://doaj.org/article/6397aec38f21473f9cfd0251938db086
Autor:
Mattia Giulianini, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Publikováno v:
IEEE Electron Device Letters. 43:557-560
Autor:
Gerardo Malavena, Mattia Giulianini, Christian Monzio Compagnoni, Luca Chiavarone, Alessandro S. Spinelli
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Autor:
Michael Trinczek, Nathaniel A. Dodds, Marty R. Shaneyfelt, Marcello Calabrese, Angelo Visconti, Ewart W. Blackmore, Luca Chiavarone, Simone Gerardin, J.R. Schwank, Alessandro Paccagnella, Veronique Ferlet-Cavrois, Marta Bagatin, M. Bonanomi
Publikováno v:
IEEE Transactions on Nuclear Science. 64:421-426
We discuss upsets in erased floating gate cells, due to large threshold voltage shifts, using statistical distributions collected on a large number of memory cells. The spread in the neutral threshold voltage appears to be too low to quantitatively e
Autor:
Michele Ghidotti, Andrea L. Lacaita, Alessandro S. Spinelli, Marcello Calabrese, Luca Chiavarone, Christian Monzio Compagnoni, Angelo Visconti
Publikováno v:
IEEE Transactions on Electron Devices. 57:1761-1767
This paper presents experimental evidences of the granular electron injection during channel hot-electron programming of NOR Flash memories. The statistical process ruling the discrete charge transfer from the substrate to the floating gate is shown
Autor:
Marta Bagatin, Veronique Ferlet-Cavrois, Angelo Visconti, Alessandro Paccagnella, Luca Chiavarone, Marcello Calabrese, Simone Gerardin, M. Bonanomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::535aa5a9b662664a11ac60b1ab22835b
http://hdl.handle.net/11577/3194064
http://hdl.handle.net/11577/3194064
Autor:
Gianluca M. Farinola, T. Cassano, Francesco Naso, Francesco Babudri, Luca Chiavarone, Raffaele Tommasi, Antonio Cardone
Publikováno v:
Macromolecular chemistry and physics
204 (2003): 1621–1627. doi:10.1002/macp.200350021
info:cnr-pdr/source/autori:Babudri F. 1, Cardone A. 2, Farinola G.M. 3, Naso F. 4, Cassano T. 5, Chiavarone L. 6, Tommasi R. 7/titolo:Synthesis and Optical Properties of a Copolymer of Tetrafluoro-and Dialkoxy-Substituted Poly(p-phenylenevinylene) with a High Percentage of Fluorinated Units/doi:10.1002%2Fmacp.200350021/rivista:Macromolecular chemistry and physics (Print)/anno:2003/pagina_da:1621/pagina_a:1627/intervallo_pagine:1621–1627/volume:204
204 (2003): 1621–1627. doi:10.1002/macp.200350021
info:cnr-pdr/source/autori:Babudri F. 1, Cardone A. 2, Farinola G.M. 3, Naso F. 4, Cassano T. 5, Chiavarone L. 6, Tommasi R. 7/titolo:Synthesis and Optical Properties of a Copolymer of Tetrafluoro-and Dialkoxy-Substituted Poly(p-phenylenevinylene) with a High Percentage of Fluorinated Units/doi:10.1002%2Fmacp.200350021/rivista:Macromolecular chemistry and physics (Print)/anno:2003/pagina_da:1621/pagina_a:1627/intervallo_pagine:1621–1627/volume:204
A copolymer of 2,3,5,6-tetrafluoro-1,4-phenylenevinylene and 2,5-dioctyloxy-1,4-phenylenevinylene [co(TFPV-DOPV)], containing more than 60% of tetrafluorophenylenevinylene monomeric units, was synthesized by the Stille cross-coupling reaction. Its li
Autor:
Christopher D. Frost, Simone Gerardin, Luca Chiavarone, Marcello Calabrese, Alessandro Paccagnella, Marta Bagatin, Angelo Visconti
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts are examined and mechanisms are discussed. A comparison with NAND Flash memories
Autor:
Vessela Tsakova, Isabella De Bari, Nicola Cioffi, Gaetano Scamarcio, Cinzia Di Franco, Ilario Losito, Luisa Sabbatini, Luisa Torsi, Luca Chiavarone, Pier Giorgio Zambonin
Publikováno v:
Journal of Materials Chemistry. 11:1434-1440
Copper–polypyrrole (Cu–PPy) composites have been synthesised following an all-electrochemical procedure comprising the deposition of a thin PPy film and the subsequent pulsed potentiostatic deposition of copper from a CuCl2 solution. Surface and