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Autor:
Stefano Greco, Paolo Monge, F. Bonoli, Andreas Nutsch, Maria Luisa Polignano, Roswitha Altmann, Michael Otto, Davide Codegoni, Andreas Liebold, G. Borionetti, Caterina Riva, Luca Castellano
Publikováno v:
Solid State Phenomena. :243-248
Methods for the analysis of the oxide-silicon interface were compared for their ability to reveal metal segregation at the interface and organic contamination. The impact of these contaminations on surface recombination velocity measurements, on capa