Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Luc Van den Hove"'
Autor:
Luc Van den Hove
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d091c91d3d934fa554a858cdc3d887a9
https://doi.org/10.1117/12.2606055
https://doi.org/10.1117/12.2606055
Publikováno v:
Microelectronic Engineering. 35:517-522
One of the critical applications of DUV (248nm) lithography for 0.25 μm technology is the imaging of contact and via holes. The goal of this work was to demonstrate and verify manufacturing process capability for imaging 0.25 μm design rule (300 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a535df6599a1cf6a18214ee48668ecc
https://doi.org/10.1016/s0167-9317(96)00200-6
https://doi.org/10.1016/s0167-9317(96)00200-6
Autor:
Luc Van den Hove, Mieke Goethals, Kurt G. Ronse, Bert Bruggeman, Maaike Op de Beeck, Geert Vandenberghe
Publikováno v:
Journal of Photopolymer Science and Technology. 9:399-424
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba57b2023621866d2a66525e63c17724
https://doi.org/10.2494/photopolymer.9.399
https://doi.org/10.2494/photopolymer.9.399
Publikováno v:
Platelets. 7:139-148
There is controversy in the literature regarding the effects of plasmin on human platelets. We have studied the effects of plasmin on platelet glycoproteins, aggregation, shape change and secretion and found them to be dependent on experimental condi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b0e9d346251f05480707d91ae43a4ec
https://doi.org/10.3109/09537109609023572
https://doi.org/10.3109/09537109609023572
Autor:
Luc Van den hove
Publikováno v:
2012 International Electron Devices Meeting.
A number of key societal challenges call for more sustainable solutions that will require the combination of diverse technologies or call for radically new technologies. These solutions will be backboned by smart mobile devices and huge data centers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa1f8ff0c67f513ad7bbc5614a1a5a7
https://doi.org/10.1109/iedm.2012.6478960
https://doi.org/10.1109/iedm.2012.6478960
Publikováno v:
Microelectronic Engineering. 27:243-246
The performance of positive and negative tone resists on the critical levels of a 0.35 @mm CMOS process has been evaluated. The use of a darkfield reticle suppresses reflections in lens and resist. Therefore reflection problems are reduced for poly g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d08f879598fbdc1966a99758dda02d0
https://doi.org/10.1016/0167-9317(94)00098-f
https://doi.org/10.1016/0167-9317(94)00098-f
Publikováno v:
Journal of Photopolymer Science and Technology. 7:517-532
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b15469f0c69c805064b135123118ce
https://doi.org/10.2494/photopolymer.7.517
https://doi.org/10.2494/photopolymer.7.517
Publikováno v:
Journal of The Electrochemical Society. 139:2644-2653
Most surface imaging resist processes are based on selective incorporation of silicon during silylation, followed by dry development of the resist. The dry development is an important parameter in the resist processing, because it will influence the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ece40dbaf2ac2e416e3216b6c88c685
https://doi.org/10.1149/1.2221278
https://doi.org/10.1149/1.2221278
Autor:
Thomas Marschner, Jo Finders, Luc Van den Hove, Mireille Maenhoudt, Jan van Schoot, Anna Maria Minvielle, Kurt G. Ronse, Paul Frank Luehrmann, Bob Streefkerk
Publikováno v:
SPIE Proceedings.
In this paper, the intra-field critical dimension (CD) control of a KrF step&scan and step&repeat system are investigated and compared. The scanners are expected to replace the conventional steppers in the manufacturing of integrated circuit generati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72b191ed47ea35546571e266b8aa3919
https://doi.org/10.1117/12.310789
https://doi.org/10.1117/12.310789
Autor:
Geert Vandenberghe, Luc Van den Hove, John P. Stirniman, Kurt G. Ronse, Alexander Tritchkov, Michael L. Rieger, Anthony Yen
Publikováno v:
SPIE Proceedings.
We study the optical proximity effect and its correction using empirically derived models for DUV lithography taking into account random process variations. The sensitivity of corrected configurations to different sources of process variation (exposu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3aceb7856168dfe4a1af3fbcb9452ed
https://doi.org/10.1117/12.275990
https://doi.org/10.1117/12.275990