Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Luc Geenen"'
Autor:
Peter Verheyen, Andriy Hikavyy, Bertrand Vissouvanadin Soubaretty, Yasutoshi Okuno, Frederik Leys, Pierre Tomasini, R. Wise, Vladimir Machkaoutsan, Luc Geenen, Roger Loo, C. Claeys, Benny Van Daele, J.P. Lu, J.W. Weijtmans, Shawn G. Thomas, Nicole Thomas, Eddy Simoen, Mireia Bargallo Gonzalez
Publikováno v:
ECS Transactions. 11:47-53
This paper reports on the impact of the pre-epi bake conditions on the epitaxial growth of Si1 xGex Source-Drain (S/D) stressors as studied by p-n junction leakage analysis. It has been demonstrated that the presence of impurity-related (O, C) defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54650f1444a348e7aece96b5fd1d4eb5
https://doi.org/10.1149/1.2778649
https://doi.org/10.1149/1.2778649
Autor:
Chris Drijbooms, Denis Shamiryan, Peter Verheyen, Hans Weijtmans, Philip Absil, Chantal J. Arena, R. Wise, Sophie Passefort, Akira Inoue, Matty Caymax, John McCormack, Haruyuki Sorada, Alain Moussa, Roger Loo, Geert Eneman, Vladimir Machkaoutsan, Pierre Tomasini, Stephane Godny, Rita Rooyackers, Stefan Jakschik, Frederik Leys, Christian Walczyk, Byeong Chan Lee, Sangjin Hyun, Tinne Delande, Hugo Bender, Luc Geenen
Publikováno v:
ECS Transactions. 3:453-465
Selective Epitaxial Growth of SiGe and/or Si-cap/SiGe heterostructures offer an elegant way to improve pMOS device performance. This paper discusses some important challenges and characteristics of the corresponding epi process. Loading effects are s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5865cae7713a5efb7770e4b2dda609
https://doi.org/10.1149/1.2355843
https://doi.org/10.1149/1.2355843
Autor:
Sofie Mertens, Luc Geenen, Yihwan Kim, Wilfried Vandervorst, Caroline Demeurisse, Hugo Bender, Philip Absil, S. Kubicek, Zsolt Tokei, F. Nouri, Benny Van Daele, Olivier Richard, R. Schreutelkamp, Peter Verheyen, Johnny Steenbergen, Anne Lauwers, Christa Vrancken, Yonah Cho
Publikováno v:
ECS Transactions. 3:139-147
Integration of recessed Si:C source/drain (S/D) for deep sub- micron nMOSFET devices results in substantial improvement of electron mobility and drive current due to introduction of tensile strain in the channel. The compatibility of Ni-silicide cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0454638366659b104fbef0dcd9d13987
https://doi.org/10.1149/1.2356273
https://doi.org/10.1149/1.2356273
Autor:
Hugo Bender, Jorge A. Kittl, Stefan Kubicek, Chao Zhao, Dim-Lee Kwong, E. Augendre, S.J. Lee, Bert Brijs, A. Benedetti, Philippe Absil, Ming-Fu Li, J.D. Chen, Serge Biesemans, M.J.H. van Dal, Malgorzata Jurczak, A. Lauwers, Hong Yu Yu, Luc Geenen
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72 eV) to n-type band-edge (~4.22 eV) on thin SiON, maintaining same EOT. In addition, we did not ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fe3148b9079a8b54b60e9ea51faef0c
https://doi.org/10.1109/iedm.2005.1609429
https://doi.org/10.1109/iedm.2005.1609429
Autor:
Serge Biesemans, Stefan Kubicek, Joris Vanlaer, Karen Maex, Kristin Demeyer, Fred Loosen, Luc Geenen
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::630e3cb31ef5ded1f26e979dfdc32730
https://doi.org/10.7567/ssdm.1995.c-2-3
https://doi.org/10.7567/ssdm.1995.c-2-3
Autor:
Wilfried Vandervorst, Bert Brijs, Luc Geenen, Matty Caymax, G Blavier, Roger Loo, Milan Libezny
Publikováno v:
Journal of The Electrochemical Society. 147:751
The increased interest in epitaxial Si 1-x Ge x /Si heterostructures for device applications requires very good control of layer thickness and composition. Unfortunately, most of the well-developed characterization methods, such as Rutherford backsca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adc66e1880bd5bc9c20940d696f9e5a6
https://doi.org/10.1149/1.1393265
https://doi.org/10.1149/1.1393265
Publikováno v:
Journal of Applied Physics; Nov2010, Vol. 108 Issue 10, p104908, 25p, 2 Diagrams, 14 Graphs
Publikováno v:
Journal of Applied Physics; 3/1/2007, Vol. 101 Issue 5, p053107-N.Pag, 13p, 1 Diagram, 1 Chart, 14 Graphs
Conference
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Publikováno v:
Journal of Applied Physics; 9/15/2005, Vol. 98 Issue 6, p063530, 9p, 1 Diagram, 5 Charts, 3 Graphs