Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Luc Bideux"'
Autor:
A. Hatem-Kacha, Zineb Benamara, Guillaume Monier, M. Amrani, Luc Bideux, Abderrezzaq Ziane, B. Akkal, Abdelaziz Rabehi, Christine Robert-Goumet, Bernard Gruzza, Mawloud Guermoui
Publikováno v:
Semiconductors. 52:1998-2006
In this paper, we studied the electrical characteristic of Schottky diodes based on gold contact on nitridated GaAs substrates. The used (100) GaAs substrate is n-type with concentration of Nd = 4.9 × 1015 cm–3. Nitridation process was performed u
Autor:
Christine Robert-Goumet, Guillaume Monier, Stefan Kubsky, Hussein Mehdi, D. Paget, Philip E. Hoggan, Luc Bideux, Paul Dumas
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2019, 465, pp.787-794. ⟨10.1016/j.apsusc.2018.09.244⟩
Applied Surface Science, 2019, 465, pp.787-794. ⟨10.1016/j.apsusc.2018.09.244⟩
Applied Surface Science, Elsevier, 2019, 465, pp.787-794. ⟨10.1016/j.apsusc.2018.09.244⟩
Applied Surface Science, 2019, 465, pp.787-794. ⟨10.1016/j.apsusc.2018.09.244⟩
The aim of the present work is to perform Attenuated Total Reflectance-Fourier Transform Infra-Red spectroscopy (ATR-FTIR) investigations during N2 plasma treatment of GaAs surfaces at 500 °C inside an UHV chamber using the high intensity light of S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eadf87d3b39584b49bfd0b2e9f7d3653
https://hal.archives-ouvertes.fr/hal-01886252
https://hal.archives-ouvertes.fr/hal-01886252
Autor:
François Réveret, Christine Robert-Goumet, Philip E. Hoggan, Bernard Gruzza, Guillaume Monier, Joël Leymarie, Catherine Bougerol, Hussein Mehdi, Luc Bideux
Publikováno v:
Applied Surface Science
Applied Surface Science, 2019, 495, pp.143586. ⟨10.1016/j.apsusc.2019.143586⟩
Applied Surface Science, Elsevier, 2019, 495, pp.143586. ⟨10.1016/j.apsusc.2019.143586⟩
Applied Surface Science, 2019, 495, pp.143586. ⟨10.1016/j.apsusc.2019.143586⟩
Applied Surface Science, Elsevier, 2019, 495, pp.143586. ⟨10.1016/j.apsusc.2019.143586⟩
Two kinds of N2 plasma source, ECR (electron cyclotron resonance) and GDS (glow discharge source) generating mostly N-radical atoms and N-cationic species respectively, were used to grow a thin nitride layer on a GaAs(100) substrate. It was found tha
Publikováno v:
Ultramicroscopy
Ultramicroscopy, Elsevier, 2018, 188, pp.13-18. ⟨10.1016/j.ultramic.2018.02.008⟩
Ultramicroscopy, 2018, 188, pp.13-18. ⟨10.1016/j.ultramic.2018.02.008⟩
Ultramicroscopy, Elsevier, 2018, 188, pp.13-18. ⟨10.1016/j.ultramic.2018.02.008⟩
Ultramicroscopy, 2018, 188, pp.13-18. ⟨10.1016/j.ultramic.2018.02.008⟩
A non-destructive new imaging technique called Multi-Mode Elastic Peak Electron Microscopy (MM-EPEM), hypersensitive to surface chemistry and with an in-depth resolution of one atomic monolayer was developed. This method consists on performing severa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad0ba671416192927e42c72d7c8af68d
https://hal.archives-ouvertes.fr/hal-01827496
https://hal.archives-ouvertes.fr/hal-01827496
Autor:
Hussein Mehdi, Luc Bideux, Philip E. Hoggan, Guillaume Monier, Vladimir G. Dubrovskii, Christine Robert-Goumet
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩
Applied Surface Science, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩
Applied Surface Science, Elsevier, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩
Applied Surface Science, 2018, 427, pp.662-669. ⟨10.1016/j.apsusc.2017.08.002⟩
The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, it is necessary to investigate the nitridat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8e535503bb2eaf0b2bb88edf0457589
https://hal.archives-ouvertes.fr/hal-01827585
https://hal.archives-ouvertes.fr/hal-01827585
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena
Journal of Electron Spectroscopy and Related Phenomena, 2014, 197, pp.80-87. ⟨10.1016/j.elspec.2014.09.010⟩
Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2014, 197, pp.80-87. ⟨10.1016/j.elspec.2014.09.010⟩
Journal of Electron Spectroscopy and Related Phenomena, 2014, 197, pp.80-87. ⟨10.1016/j.elspec.2014.09.010⟩
Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2014, 197, pp.80-87. ⟨10.1016/j.elspec.2014.09.010⟩
The correction function of a hemispherical analyzer (HSA) is determined for quantitative interpretations of electron spectroscopy. In this way, electron elastic images are performed using a scanning electron gun. This new method allowed the determina
Autor:
M. A. Mahjoub, Bernard Gruzza, Alain Dubus, Nicolas Pauly, Christine Robert-Goumet, Luc Bideux, Guillaume Monier
Publikováno v:
Surface and Interface Analysis. 46:283-288
The energy loss function (ELF) is a key parameter for the calculations of energy losses undergone by electrons in matter. It is often the only input in the calculations performed within the models based on the semi-classical dielectric response theor
Autor:
Christine Robert, Abdelkrim Sellam, Nacéra Bachir Bouiadjra, Zineb Benamara, Bernard Gruzza, Luc Bideux
Publikováno v:
International Journal of Science and Engineering Applications. 2:83-86
Gallium nitride is one of the III-V semiconductors the most promising in many application areas. Indeed, because of its large direct bandgap (3,4 eV), it can be dedicated to both optoelectronic applications as transistors achieve hyper frequency. It
Autor:
V. P. Ulin, Daniel Paget, Paul Dumas, François Ozanam, V. L. Berkovits, K. Lahlil, S. Kubsky, Luc Bideux, Guillaume Monier
Publikováno v:
Journal of The Electrochemical Society. 160:H229-H236
Autor:
Mohamed Aymen Mahjoub, Christine Robert-Goumet, Bernard Gruzza, Luc Bideux, Matthieu Petit, François Réveret, Damien Chaudanson, Guillaume Monier, Mosaab Echabaane
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, 2016, 120 (21), pp.11652-11662. ⟨10.1021/acs.jpcc.6b00135⟩
Journal of Physical Chemistry C, American Chemical Society, 2016, 120 (21), pp.11652-11662. ⟨10.1021/acs.jpcc.6b00135⟩
Journal of Physical Chemistry C, 2016, 120 (21), pp.11652-11662. ⟨10.1021/acs.jpcc.6b00135⟩
Journal of Physical Chemistry C, American Chemical Society, 2016, 120 (21), pp.11652-11662. ⟨10.1021/acs.jpcc.6b00135⟩
International audience; This study reports a synthesis by the sol-gel method of stable and size-controlled ZnO quantum dots (QDs) embedded into a SiO2 matrix in the diameter range of 2.7-5.5 nm with strong visible emission in the blue-green region. X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b70a6ad807b537d7cb0292490cd09460
https://hal.science/hal-01459065
https://hal.science/hal-01459065