Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Lubos Cernaj"'
Autor:
Erik Vavrinsky, Tomas Zavodnik, Tomas Debnar, Lubos Cernaj, Jozef Kozarik, Michal Micjan, Juraj Nevrela, Martin Donoval, Martin Kopani, Helena Kosnacova
Publikováno v:
Sensors, Vol 22, Iss 2, p 526 (2022)
The whole world is currently focused on COVID-19, which causes considerable economic and social damage. The disease is spreading rapidly through the population, and the effort to stop the spread is entirely still failing. In our article, we want to c
Externí odkaz:
https://doaj.org/article/78f04b0d1990413ca78e649803ae57a4
Autor:
Jozef Kozarik, Krisztian Gasparek, Tomas Zavodnik, Lubos Cernaj, Martin Jagelka, Martin Donoval
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Autor:
Ales Chvala, Juraj Marek, J. Kozarik, Martin Donoval, Daniel Donoval, Lubos Cernaj, M. Minarik
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM)
This paper describes the results of repetitive short circuit (SC) measurements of power GaN HEMTs with p-GaN gates. Description of test setup and measurement method is presented. Typical measured waveforms and basic description of effects during SC a
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM)
This paper presents electrothermal circuit model of SiC power MOSFET. The model is calibrated automatically by artificial neural network (NN). Appropriate setting and properties for NN training is described. Very high accuracy of the proposed model i
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
In this paper we present the results of Unclamped Inductive Switching (UIS) measurements of power GaN HEMTs comprised of p-GaN gates. Typical test waveforms and basic description of effects during discharging period of inductor are presented and disc
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
In this paper we describe a low-power IoT parking sensor that uses changes in magnetic field to detect occupancy of a parking space. We describe the challenges that are involved in long term monitoring of magnetic field and communication with a backe
Autor:
Tomas Zavodnik, Martin Donoval, J. Kozarik, D. Donova, Ales Chvala, Juraj Marek, Lubos Cernaj, Martin Jagelka
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
Direct 3-D electrothermal equivalent model of power HEMT is presented in this paper. The model works with Synopsys HSPICE and 3-D RC network is build using MathWorks MATLAB. The thermal analysis of the multifinger power HEMT is performed. The feature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::248f30b226c3f6177ee42550317dcbbd