Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Lubica Stuchlikova"'
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 20, Iss 1, Pp 86-94 (2022)
This paper investigates a degradation of three types of automotive power MOSFETs through repetitive Unclamped Inductive Switching (UIS) test typically used to evaluate the avalanche robustness of power devices. It is not uncommon in switching applica
Externí odkaz:
https://doaj.org/article/f1406e2478db45edb25ddc30287ff739
Autor:
Juraj Marek, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova, Martin Weis
Publikováno v:
Materials, Vol 15, Iss 22, p 8230 (2022)
Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive uncla
Externí odkaz:
https://doaj.org/article/084838def2234127b0662c6427bdd9da
Autor:
Lubica Stuchlikova, Beata Sciana, Arpad Kosa, Matej Matus, Peter Benko, Juraj Marek, Martin Donoval, Wojciech Dawidowski, Damian Radziewicz, Martin Weis
Publikováno v:
Materials, Vol 15, Iss 21, p 7621 (2022)
Transient spectroscopies are sensitive to charge carriers released from trapping centres in semiconducting devices. Even though these spectroscopies are mostly applied to reveal defects causing states that are localised in the energy gap, these metho
Externí odkaz:
https://doaj.org/article/6651c61e156a435d87c18d53a022241e
Autor:
Arpad Kosa, Lubica Stuchlikova, Ladislav Harmatha, Jaroslav Kovac, Beata Sciana, Wojciech Dawidowski, Marek Tlaczala
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 1, Pp 114-119 (2017)
This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition depen
Externí odkaz:
https://doaj.org/article/1746e21a614e47c39cf9bf9180bcfa20
Autor:
Peter Juhasz, Juraj Nevrela, Michal Micjan, Miroslav Novota, Jan Uhrik, Lubica Stuchlikova, Jan Jakabovic, Ladislav Harmatha, Martin Weis
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 47-52 (2016)
The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good
Externí odkaz:
https://doaj.org/article/98849446d02a45aca19e3c5884b6adc5
Autor:
Jakub Rybar, Lubica Stuchlikova, Ladislav Harmatha, Juraj Jakus, Jaroslav Kovac, Beata Sciana, Damian Radziewicz, Damian Pucicki, Wojciech Dawidowski, Marek Tlaczala
Publikováno v:
Communications, Vol 16, Iss 1, Pp 10-14 (2014)
The paper presents an in-depth DLTS characterization of the p-i-n structure based on the InGaAsN/GaAs triple quantum well. Three DLTS evaluation methods were used for evaluation of the measured DLTS spectra. The results of all evaluation methods are
Externí odkaz:
https://doaj.org/article/83e2a225f8914fdcb46cd7cf8f0fd396
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 269-272 (2004)
The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has
Externí odkaz:
https://doaj.org/article/bfb96ccf49ac472c91c7709cfb9ec855
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 305-307 (2004)
The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a metal-oxide-semiconductor capacitors (MOS-C). From the low- (If) and high-frequency (hf) capacita
Externí odkaz:
https://doaj.org/article/6e22d461a0ad4fff96af0b260be15c49
Autor:
Peter Benko, Arpad Kosa, Matej Matus, Wojciech Dawidowski, Damian Radziewicz, Beata Sciana, Lubica Stuchlikova
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Autor:
Harmatha, Ladislav, Ľubica, Stuchlíková, Juraj, Racko, Juraj, Marek, Juraj, Pecháček, Peter, Benko, Michal, Nemec, Juraj, Breza
Publikováno v:
In Applied Surface Science 1 September 2014 312:102-106