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Autor:
J.M. Anderson, David J. Brownell, G. A. Prinz, Jian-Gang Zhug, Luan V. Van, Harold Huggins, Joseph A. Christodoulides
Publikováno v:
Journal of Applied Physics. 97:10P504
Vertical magnetoresistive random access memory (VMRAM) is a high-density, nonvolatile memory that employs current perpendicular to the plane to switch soft (read) and hard (write) magnetic layers of a giant-magnetoresistive memory element. VMRAM cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4dea7a03fc3ae306a8f474f2a1b2589
https://doi.org/10.1063/1.1854272
https://doi.org/10.1063/1.1854272
