Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Enhanced Organic Thin-Film Transistor Stability by Preventing MoO 3 Diffusion with Metal/MoO 3 /Organic Multilayered Interface Source-Drain Contact.

Autor: Yang Z; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Guo C; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Qin L; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Hu JT; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Luan P; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Liang Z; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Li X; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Ding H; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Wang DK; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China.; National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming650504, China., Zhang T; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China., Zhu Q; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China.; National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming650504, China., Lu ZH; Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China.; National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming650504, China.; Department of Materials Science and Engineering, University of Toronto, TorontoM5S 3E4, Canada.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Jan 11; Vol. 15 (1), pp. 1704-1717. Date of Electronic Publication: 2022 Dec 21.