Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Lu-Rong Gan"'
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)
Abstract Synaptic devices are necessary to meet the growing demand for the smarter and more efficient system. In this work, the anisotropic rhenium disulfide (ReS2) is used as a channel material to construct a synaptic device and successfully emulate
Externí odkaz:
https://doaj.org/article/62450c17c2f54892a52ed624ae12a868
A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
Publikováno v:
Micromachines, Vol 10, Iss 9, p 558 (2019)
We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO2 high-k dielectric extend above source and dr
Externí odkaz:
https://doaj.org/article/46a20bb1ca4347b7b2ae07686c99c07e
A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications
Publikováno v:
Micromachines, Vol 10, Iss 9, p 558 (2019)
Micromachines
Volume 10
Issue 9
Micromachines
Volume 10
Issue 9
We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO2 high-k dielectric extend above source and dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ff763ac9293fb93cee713df11b618b4
https://doi.org/10.3390/mi10090558
https://doi.org/10.3390/mi10090558