Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Lu-Chang Chen"'
Autor:
Lu-Chang Chen, 陳律璋
91
During the semiconductor technology improvement, the device dimensions is shrinking, or its use as a backup for high current and low energy applications to form the ultra shallow junction for requirement. The fundamental device --- MOSFET, f
During the semiconductor technology improvement, the device dimensions is shrinking, or its use as a backup for high current and low energy applications to form the ultra shallow junction for requirement. The fundamental device --- MOSFET, f
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43751808442442163963
Publikováno v:
Journal of Baltic Science Education. 20:677-690
Most studies have concentrated in assessing students’ overall attitudes towards science, mathematics, and engineering/technology or the attitude towards individual STEM domain. The present research aims to explore primary students’ gender and gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f11c9d4e42475db5172ed929ab6f4c
https://doi.org/10.33225/jbse/21.20.677
https://doi.org/10.33225/jbse/21.20.677
Publikováno v:
Physical Review Physics Education Research, Vol 15, Iss 1, p 010106 (2019)
Students’ epistemological beliefs have been confirmed to influence students’ physics learning in an essential way. The Colorado Learning Attitudes about Science Survey (CLASS) is an assessment instrument for evaluating students’ beliefs towards
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ce68f4ccff388c5dde7ebebdd29d2c2
https://doaj.org/article/ae345b5b33d64cb99a091af4705fe36f
https://doaj.org/article/ae345b5b33d64cb99a091af4705fe36f
Publikováno v:
Solid-State Electronics. 56:68-72
The reduction of transient enhanced diffusion (TED) and suppression of short-channel effect (SCE) are very critical for the formation of ultra shallow junctions required for deep sub-micron devices. This article reports the nanoscale gate length of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfaf17df4efe7142f2f4fc13b5ebcf46
https://doi.org/10.1016/j.sse.2010.11.005
https://doi.org/10.1016/j.sse.2010.11.005
Autor:
Lu-Chang Chen, Meng-Chyi Wu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 266:4037-4041
This article reports on the effects of surface charge on bare wafers and p-channel MOSFETs by a positive ion beam accompanied by an electron beam current for surface charge neutralization. Without the negative electron beam the films show a higher sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df9c40fd03f4d63d828b3b14c41dd49
https://doi.org/10.1016/j.nimb.2008.06.035
https://doi.org/10.1016/j.nimb.2008.06.035