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pro vyhledávání: '"Lu Kao"'
Akademický článek
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Autor:
Lu Kao Yufeng, 盧高玉鳳
93
Customer relationship management (CRM) can not only be a concept, but a management within a strategic structure need to be thoroughly carried out in this time of customer first. Previous enterprise used to put emphasis on profit only and they
Customer relationship management (CRM) can not only be a concept, but a management within a strategic structure need to be thoroughly carried out in this time of customer first. Previous enterprise used to put emphasis on profit only and they
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77992054052226010668
Autor:
Yuan Lin, Min-Lu Kao, You-Chen Weng, Chang-Fu Dee, Shih-Chen Chen, Hao-Chung Kuo, Chun-Hsiung Lin, Edward-Yi Chang
Publikováno v:
Micromachines, Vol 13, Iss 12, p 2140 (2022)
Substrate voltage (VSUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be
Externí odkaz:
https://doaj.org/article/1e70b521f9bc477593c31e7b54c0d9b9
Publikováno v:
Materials Research Express, Vol 9, Iss 10, p 105903 (2022)
By modulating the thermal stress during film growth, the strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by metal organic chemical vapor phase deposition (MOCVD) on silicon (Si) (111) substrate. The
Externí odkaz:
https://doaj.org/article/b6b4171c33704bbf9a3178a2ce385a41
Autor:
You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee
Publikováno v:
Materials, Vol 15, Iss 3, p 703 (2022)
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect t
Externí odkaz:
https://doaj.org/article/a1a6379076064d88b19a957734b5f66b
Autor:
Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 43:2105-2108
Autor:
Min-Lu Kao, Ching-Ting Lee, Quang Ho Luc, Edward Yi Chang, Jui-Sheng Wu, Chih-Chieh Lee, Chih-Yi Yang, Chia-Hsun Wu, Daisuke Ueda, You-Chen Weng
Publikováno v:
IEEE Electron Device Letters. 42:1268-1271
A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported for the first time. The optimized E-mode FEG-HEMT implements a novel SCFP structure, which
Autor:
You-Chen Weng, Heng-Tung Hsu, Yi-Fan Tsao, Debashis Panda, Hsuan-Yao Huang, Min-Lu Kao, Yu-Pin Lan, Edward Yi Chang, Ching-Ting Lee
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:035002
In this paper, we demonstrate the AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate using an AlGaN back-barrier (BB) and super-lattice (SL) buffer to achieve high breakdown and low current collapse (CC) properties for Radio-frequen
Autor:
Fan-Ching, Hsieh, Lu-Kao, Chang, Chih-Hsuan, Tsai, Jung-En, Kuan, Ke-Feng, Wu, Cindy, Wu, Whei-Fen, Wu
Publikováno v:
The Journal of general and applied microbiology. 66(6)
An Escherichia coli ATP-dependent two-component protease, ClpYQ(HslUV), targets the SulA molecule, an SOS induced protein. ClpY recognizes, unfolds and translocates the substrates into the proteolytic site of ClpQ for degradation. ClpY is divided int
Akademický článek
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