Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Lu, Darsen"'
Autor:
Le, Hoang-Hiep, Baig, Md. Aftab, Hong, Wei-Chen, Tsai, Cheng-Hsien, Yeh, Cheng-Jui, Liang, Fu-Xiang, Huang, I-Ting, Tsai, Wei-Tzu, Cheng, Ting-Yin, De, Sourav, Chen, Nan-Yow, Lee, Wen-Jay, Lin, Ing-Chao, Chang, Da-Wei, Lu, Darsen D.
This paper presents a simulation platform, namely CIMulator, for quantifying the efficacy of various synaptic devices in neuromorphic accelerators for different neural network architectures. Nonvolatile memory devices, such as resistive random-access
Externí odkaz:
http://arxiv.org/abs/2306.14649
Autor:
De, Sourav, Qiu, Bo-Han, Bu, Wei-Xuan, Baig, Md. Aftab, Su, Chung-Jun, Lee, Yao-Jen, Lu, Darsen
This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks. Multiple-level-cell (MLC) op
Externí odkaz:
http://arxiv.org/abs/2103.13302
This paper reports the impacts of temperature variation on the inference accuracy of pre-trained all-ferroelectric FinFET deep neural networks, along with plausible design techniques to abate these impacts. We adopted a pre-trained artificial neural
Externí odkaz:
http://arxiv.org/abs/2103.03111
Autor:
De, Sourav, Baig, Md. Aftab, Qiu, Bo-Han, Le, Hoang- Hiep, Sung, Po-Jung, Su, Chun-Jung, Lee, Yao- Jen, Lu, Darsen
This paper reports a synergistic approach of READ and WRITE optimization by deploying a high-precision digital computation unit along with a low-precision ferroelectric finFET (Fe-finFETs) based analog vector-matrix multiplication block for mitigatin
Externí odkaz:
http://arxiv.org/abs/2008.10363
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier lowering ef
Externí odkaz:
http://arxiv.org/abs/2007.13168
In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick Hf$_{0.5}$Zr$_{0.5}$O$_2$ based
Externí odkaz:
http://arxiv.org/abs/2006.10691
Autor:
Lu, Darsen D., Dunga, Mohan V., Niknejad, Ali M., Hu, Chenming, Liang, Fu-Xiang, Hung, Wei-Chen, Lee, Jia-Wei, Hsu, Chun-Hsiang, Chiang, Meng-Hsueh
Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential based modeli
Externí odkaz:
http://arxiv.org/abs/2005.02580
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric characteristic
Externí odkaz:
http://arxiv.org/abs/2004.03903
Akademický článek
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Publikováno v:
In Solid State Electronics March 2023 201
