Radiation effects in VLSI Ferroelectric Random Access nonvolatile Memory.

Autor: Korshunov, F. P., Bogatyrev, Yu. V., Lastovskiy, S. B., Turtsevich, A. S., Shwedov, S. V., Belous, A. I., Lozitskiy, E. G., Kulgachev, V. I.

Publikováno v: 2012 22nd International Crimean Conference 'Microwave & Telecommunication Technology'; 1/ 1/2012, p791-793, 3p