Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Loyd Perrymore"'
Autor:
Satish Singh, Loyd Perrymore, Amit Gupta, Fauzia Khatkhatay, Stewart Wenner, Carlos Chacon, Danda P. Acharya
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
High temperature anneals are required for densification of oxide-gap fill shallow trench isolation structures. A major concern in these processes is wafer deformation and substrate damage, which raises reliability concerns. The corresponding defects,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373b286b62babfc2fa2c7338c986bee4
https://doi.org/10.1109/asmc.2018.8373217
https://doi.org/10.1109/asmc.2018.8373217
Autor:
S. Borthakur, Husam N. Alshareef, R. Bergmann, L. Larson, A. Hou, D.J. Derro, A. Agarwal, Howard R. Huff, F. Shaapur, Robert W. Murto, George A. Brown, Billy Nguyen, Mark Gardner, P. Lysaght, Chris M. Sparks, Gennadi Bersuker, Deborah J. Riley, Loyd Perrymore, C. Lim, Kenneth Torres, Peter Zeitzoff, M. Freiler, S. Lim, Y. Kim, G. Gebara, Brendan Foran, Chadwin D. Young, J.E. Lim, M.D. Jackson, B. Bowers, J. Gutt, Joel Barnett, P.J. Chen
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).
We review several gate stack fabrication issues critical for robust, commercially viable tools, including assessment of possible fab contamination due to the higher-k gate dielectrics and the role of subsequent thermal procedures during, for example,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1993d901660b8c2c543da639dd6375a5
https://doi.org/10.1109/iwgi.2001.967538
https://doi.org/10.1109/iwgi.2001.967538
Autor:
Y. Kim, Bill Bowers, Michael Freiler, Gennadi Bersuker, Renate Bergmann, Jerry Chen, Eric Shero, Loyd Perrymore, Chris M. Sparks, Jae E. Lim, Robert W. Murto, Howard R. Huff, Joel Barnett, Steven Lin, Patrick S. Lysaght, Avinash Agarwal, Billy Nguyen, Deborah J. Riley
Publikováno v:
MRS Proceedings. 670
ZrO2 and HfO2 and their alloys with SiO2 are currently among the leading high-k materials for replacing SiOxNy as the gate dielectric for the sub-100 nm technology nodes. International SEMATECH (ISMT) is currently investigating integration issues ass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e456b7791b9578370e8ec9bddaacb351
https://doi.org/10.1557/proc-670-k2.1
https://doi.org/10.1557/proc-670-k2.1
Publikováno v:
SPIE Proceedings.
We have designed a monolithic 8 X 8 optical crossbar switch that can provide a lossless link for a fiber optic databus or communication system. The device is based upon a semiconductor active (with gain) waveguide structure that can be used as a buil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11e06eadc7071904aa512bb05b1be510
https://doi.org/10.1117/12.177657
https://doi.org/10.1117/12.177657
Publikováno v:
Photonics for Space Environments.
We have developed semiconductor active (with gain) waveguide structures than can be used as building blocks at a monolithic device and multi-device level to configure a high transmission bandwidth space division switch. For space and aircraft systems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a17ce96c3b344d5847567f2d93bbc5f
https://doi.org/10.1117/12.156571
https://doi.org/10.1117/12.156571