Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Low-power application"'
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107619- (2024)
Recently, a phase-transition field effect transistor (phase-FET) integrated with a phase-transition material (PTM) is attracting attention as a steep switching device, and attempts to solve the power consumption limitation of conventional CMOS using
Externí odkaz:
https://doaj.org/article/8655bf3bb8824097a3f9db107fcc0cb3
Akademický článek
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Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 19, Iss 2, Pp 145-154 (2021)
This paper highlights a comparative analysis of eight diverse techniques for 2 to 1 multiplexer implementation. The functionality is identical but significant differences in dynamic power consumption and propagation delay are observed. This paper aim
Externí odkaz:
https://doaj.org/article/9bb7636a83fa4831ae0225ba9962180b
Publikováno v:
Electrical, Control and Communication Engineering, Vol 16, Iss 2, Pp 88-94 (2020)
The last decade has seen multiple research work on the use of LoRaWAN technology in smart agriculture. In open field storage, monitoring is crucial for increasing the logistics efficiency and improving crop quality. As battery maintenance is expensiv
Externí odkaz:
https://doaj.org/article/0b6b0e090d8a4073b5151da6d3d02412
Publikováno v:
Energy Reports, Vol 6, Iss , Pp 2022-2029 (2020)
Theoretical modeling and experimental validation of a thermoelectric generator (TEG) integrated with a phase change material (PCM) are reported in this paper. The proposed device converts the daily ambient temperature variations into a temperature di
Externí odkaz:
https://doaj.org/article/9aec8dc114d547ef81854f468e0583ea
Akademický článek
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Autor:
Hanggyo Jung, Jeesoo Chang, Changhyun Yoo, Jooyoung Oh, Sumin Choi, Juyeong Song, Jongwook Jeon
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 4096 (2022)
In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level. Through this,
Externí odkaz:
https://doaj.org/article/d894d6f01cfb4599a9fac0da65e49c24
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 189-194 (2018)
Steep slope (SS
Externí odkaz:
https://doaj.org/article/0b0c63bf889f463687e437d00fa753be
Publikováno v:
Nano Convergence, Vol 5, Iss 1, Pp 1-9 (2018)
Abstract Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the represent
Externí odkaz:
https://doaj.org/article/564e887026b541c8b665cf15e87913a7
Publikováno v:
Applied Sciences, Vol 10, Iss 9, p 3070 (2020)
Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in which the electrons and holes in the channel region act on the energy states of the potential barrier and wall. Owing to the positive feedback phenomenon, FBF
Externí odkaz:
https://doaj.org/article/5e77e1c32e134cce90172f0f9acb7718