Zobrazeno 1 - 10
of 4 967
pro vyhledávání: '"Low-frequency noise"'
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications. A focal point of inquiry pertains to th
Externí odkaz:
https://doaj.org/article/0019dfcdae4840cd97d7b071382f1251
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract Low-frequency noise (LFN) characteristics of semiconductor devices pose a significant importance for understanding their working principle, particularly concerning material imperfections. Accordingly, substantial research endeavors have focu
Externí odkaz:
https://doaj.org/article/4b0c2718b35f4b8985398f1b7054da42
Publikováno v:
Medycyna Pracy, Vol 75, Iss 5, Pp 425-431 (2024)
Industrial noise sources are among the environmental noise sources that are ranked second among the causes of ill health in Europe by the World Health Organization. The aim of this paper is to summarize and review of published information focusing on
Externí odkaz:
https://doaj.org/article/d2b78e1515de42eb8e289bad7ab942ab
Publikováno v:
Chengshi guidao jiaotong yanjiu, Vol 27, Iss 10, Pp 65-69 (2024)
Objective The noise generated by air-conditioning system is a primary source of static noise in trams, with most of the interior noise originating from the air-conditioning supply fan. Aimed at reducing the noise in air-conditioning duct, research fo
Externí odkaz:
https://doaj.org/article/98273fec1cb3494cbf98e5a4c79c8602
Autor:
Siavash Etemadinezhad, Jamshid Yazdani Charati, Seyed Ehsan Samaei, Sedighe Jafarimanesh, Solale Ramezani
Publikováno v:
تحقیقات سلامت در جامعه, Vol 10, Iss 2, Pp 1-11 (2024)
Introduction and purpose: Noise is one of the most harmful physical factors in workplaces in both developed and developing countries. Still, low-frequency noise has not received enough attention, and the current regulations on its control are inadequ
Externí odkaz:
https://doaj.org/article/7f572c3aa6db44059dca3de9a21eea51
Autor:
Wonjun Shin, Junsung Byeon, Ryun‐Han Koo, Jungmoon Lim, Jung Hyeon Kang, A‐Rang Jang, Jong‐Ho Lee, Jae‐Joon Kim, SeungNam Cha, Sangyeon Pak, Sung‐Tae Lee
Publikováno v:
Advanced Science, Vol 11, Iss 28, Pp n/a-n/a (2024)
Abstract The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transiti
Externí odkaz:
https://doaj.org/article/264f0db575dd47b4a7d62d976ea5371d
Autor:
Lee Hsiao Mun, Lee Heow Pueh
Publikováno v:
Noise Mapping, Vol 11, Iss 1, Pp 2891-5 (2024)
Rapid transit or mass rapid transit (MRT) is a high-capacity public transport designed to carry a large number of passengers, especially during the peak hours. They are becoming very popular in major cities and some deem the presence of the rapid tra
Externí odkaz:
https://doaj.org/article/464a952e034d4b55b5274ff9fb40e615
Publikováno v:
Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol 22, Iss 4, Pp 410-426 (2024)
Abstract Low frequency noise (LFN) of highly coherent laser (linewidth below 10 kHz) is analyzed using an unbalanced Mach- Zehnder interferometer (UMZI) with adjustable long arm span. Furthermore, the Laser Relative Excess Noise (LREN) is introduced
Externí odkaz:
https://doaj.org/article/60f2c3182fc24c4a8ba61a796311c4e2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 573-580 (2024)
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to
Externí odkaz:
https://doaj.org/article/b4fd5fdbd1fb42b08a36c5ff6d9b2f2e
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 534-540 (2024)
The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of
Externí odkaz:
https://doaj.org/article/29f75ae1e0c64eb4b15959a1ffdf7eeb