Zobrazeno 1 - 10
of 77 076
pro vyhledávání: '"Low-frequency noise"'
Microperforated panels (MPPs) display excellent capacity in noise control applications owing to their high strength, simple design, and efficacy in low-frequency sound absorption. Traditionally, the development of MPPs has relied on a trial-and-error
Externí odkaz:
http://arxiv.org/abs/2410.05635
Autor:
Maria-Moreno, Cristian, Mateos, Ignacio, Pacheco-Ramos, Guillermo, Rivas, Francisco, Cifredo-Chacón, María-Ángeles, Quirós-Olozábal, Ángel, Guerrero-Rodríguez, José-María, Karnesis, Nikolaos
Publikováno v:
IEEE Transactions on Instrumentation and Measurement, vol. 73, pp. 1-11, 2024
In recent years, nanosatellites have revolutionized the space sector due to their significant economic and time-saving advantages. As a result, they have fostered the testing of advanced instruments intended for larger space science missions. The cas
Externí odkaz:
http://arxiv.org/abs/2410.13692
Autor:
Karami, Fatemeh1 (AUTHOR) karamif.mech@gmail.com, Shokri Rad, Mozafar1 (AUTHOR) shokrirad.m@lu.ac.ir, Karimipour, Iman2 (AUTHOR)
Publikováno v:
Journal of Low Frequency Noise, Vibration & Active Control. Dec2024, Vol. 43 Issue 4, p1679-1695. 17p.
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications. A focal point of inquiry pertains to th
Externí odkaz:
https://doaj.org/article/0019dfcdae4840cd97d7b071382f1251
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract Low-frequency noise (LFN) characteristics of semiconductor devices pose a significant importance for understanding their working principle, particularly concerning material imperfections. Accordingly, substantial research endeavors have focu
Externí odkaz:
https://doaj.org/article/4b0c2718b35f4b8985398f1b7054da42
Publikováno v:
Opt. Express 32, 29781-29794 (2024)
We present two distinct ultra-low frequency noise lasers at 729 nm with a fast frequency noise of 30 Hz^2/Hz, corresponding to a Lorentzian linewidth of 0.1 kHz. The characteristics of both lasers, which are based on different types of laser diodes,
Externí odkaz:
http://arxiv.org/abs/2406.08908
Publikováno v:
Nanoscale 16, 21571-21581 (2024)
We study the low-frequency noise (LFN), i.e. flicker noise, also referred to as 1/f noise, in 2D networks of molecularly functionalized gold nanoparticles (NMN: nanoparticle-molecule network). We examine the noise behaviors of the NMN hosting alkyl c
Externí odkaz:
http://arxiv.org/abs/2406.13825
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2 K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to
Externí odkaz:
http://arxiv.org/abs/2405.17685
Autor:
Kervazo, R, Congar, A, Perin, G, Lablonde, L, Butté, R, Grandjean, N, Bodiou, L, Charrier, J, Trebaol, S
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and a side-mod
Externí odkaz:
http://arxiv.org/abs/2405.15462
Autor:
He, Yuanpeng1 (AUTHOR), Wang, Xinghuan2 (AUTHOR), Yao, Yuyang1 (AUTHOR), Sheng, Xiaozhen3 (AUTHOR) shengxiaozhen@hotmail.com
Publikováno v:
Scientific Reports. 11/4/2024, Vol. 14 Issue 1, p1-21. 21p.