Zobrazeno 1 - 10
of 2 581
pro vyhledávání: '"Low frequency noise (LFN)"'
Autor:
Kom Kammeugne, R., Theodorou, C., Leroux, C., Vauche, L., Mescot, X., Gwoziecki, R., Becu, S., Charles, M., Bano, E., Ghibaudo, G.
Publikováno v:
In Solid State Electronics February 2023 200
Akademický článek
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Autor:
Jalil Derakhshan, Adibeh Abdi, Somayeh Yazdani, Mohmmad Babamiri, Sardar Saiedi, Yaser Khaledi
Publikováno v:
Majallah-i Dānishgāh-i ’Ulūm-i Pizishkī-i Īlām, Vol 26, Iss 6, Pp 10-22 (2019)
Introduction: Low-frequency noise, even at low levels, is annoying and affects the physiological function of individuals. Some individual differences, such as sensitivity to noise, can reduce or increase the effect of noise on physiological parameter
Externí odkaz:
https://doaj.org/article/fec81f6aa1fb4aa68be43979510dc150
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract The need for understanding the low-frequency noise (LFN) of metal oxide semiconductor thin-film transistors (TFTs) is increasing owing to the substantial effects of LFN in various circuit applications. A focal point of inquiry pertains to th
Externí odkaz:
https://doaj.org/article/0019dfcdae4840cd97d7b071382f1251
Autor:
R. Kom Kammeugne, C. Theodorou, C. Leroux, L. Vauche, X. Mescot, R. Gwoziecki, S. Becu, M. Charles, E. Bano, G. Ghibaudo
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩
Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccba85ceea2acfa422702ace7c6e2fe6
https://doi.org/10.1016/j.sse.2022.108555
https://doi.org/10.1016/j.sse.2022.108555
Autor:
Wenyang Zhang, Li Lu, Chenfei Li, Weijie Jiang, Wenzhao Wang, Xingqiang Liu, Ablat Abliz, Da Wan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 502-507 (2024)
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment e
Externí odkaz:
https://doaj.org/article/ab217a3f1a584abe87876197bfa4b30b
Publikováno v:
journal of ilam university of medical sciences. 26:10-22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e6b588a42223aa445aaa16a37ded77
https://doi.org/10.29252/sjimu.26.6.10
https://doi.org/10.29252/sjimu.26.6.10
Autor:
Yatexu Patel, Pouya Valizadeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 338-344 (2024)
The low frequency drain noise-current characteristics of metallic-face InAlN/AlN/GaN heterostructure field effect transistors (HFETs) having fin structures only under the gate, while maintaining a planar structure in the access regions, are compared
Externí odkaz:
https://doaj.org/article/3856d928e0984a0bb473abe30dce2a50
Autor:
Poulsen, Torben
Publikováno v:
Journal of Low Frequency Noise, Vibration & Active Control. Dec2003, Vol. 22 Issue 4, p191-201. 11p.
Autor:
Wonjun Shin, Ji Ye Lee, Ryun‐Han Koo, Jangsaeng Kim, Jong‐Ho Lee, Sang Yeol Lee, Sung‐Tae Lee
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract The presence of low‐frequency noise (LFN) in amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) is of utmost concern, prompting extensive investigations into the analysis of LFN. However, prior research endeavors have tende
Externí odkaz:
https://doaj.org/article/d5f21a7ab8574cf5b59cd0647d10dbe0